Method of making a semiconductor laser device
July 29, 2016. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod of diffusing silicon into compound semiconductors and compound semiconductor devices Method of forming current barriers in semiconductor lasers Method for the making of optoelectronic semiconductor devices Semiconductor laser device Top emitting VCSEL with implant Semiconductor laser Method for producing P-type impurity induced layer disordering Method of manufacturing a semi conductor device having a second well formed within a first well Method of making a stripe-geometry II/VI semiconductor gain-guided injection laser structure using ion implantation Patent #: 5567646 InventorsAssigneeApplicationNo. 687938 filed on 07/29/1996US Classes:438/45, Dopant introduction into semiconductor region438/36Ordered or disorderedExaminersPrimary: Bowers, Charles L. Jr.Assistant: Paladugu, Ramamohan Rao Attorney, Agent or FirmForeign Patent References
International ClassH01L 021/20Foreign Application Priority Data1994-09-06 JPAbstractA semiconductor laser device in which semiconductor layers of an n-type cladding layer, a quantum well active layer 106, a p-type cladding layer, and an intermediate layer are formed on an n-type GaAs substrate in successive order, and a mixed-crystal is formed in a region except the semiconductor layers of the contact layer and the lower part of the contact layer by diffusing Si into the structure from above the intermediate layer, characterized in that the contact layer and the intermediate layer are made of n-type or nonconductive semiconductor material, and a p-type low-resistance region, formed by diffusing Zn into the structure from above the contact layer, is profiled so as not to overlap with the mixed-crystal region formed by Si diffusion.Other References
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