Method and structure for front-side gettering of silicon-on-insulator substrates
December 20, 2015. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesProcess of gettering semiconductor devices Gettering process with multi-step annealing and inert ion implantation Method of producing a substrate having semiconductor-on-insulator structure with gettering sites Method of manufacturing SOI semiconductor device Method for thinning SOI films having improved thickness uniformity Semiconductor substrate for gettering Method of manufacturing substrate having semiconductor on insulator SOI (silicon on insulator) substrate with enhanced gettering effects Method of making a getterer for multi-layer wafers Patent #: 5478758 InventorsApplicationNo. 575458 filed on 12/20/1995US Classes:438/402, And gettering of substrate257/E21.23, With simultaneous mechanical treatment, e.g., chemical-mechanical polishing (EPO)257/E21.32, Of silicon on insulator (SOI) (EPO)438/476By layers which are coated, contacted, or diffusedExaminersPrimary: Dang, TrungAttorney, Agent or FirmInternational ClassH01L 021/306AbstractA method of gettering an SOI wafer from the front side of the wafer includes depositing a gettering layer, such as polysilicon, on the SOI layer and annealing the SOI wafer with the gettering layer in place. A polish stop structure, which can be deposited before or after the gettering layer, provides a means for selectively removing the gettering layer from the SOI wafer without damaging the surface or eroding the thickness of the SOI layer.Other References
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