High voltage cut-off semiconductor device

Patent 5640036 Issued on June 17, 1997. Estimated Expiration Date:

September 12, 2015. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Abstract Claims Description Full Text

Patent References

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Inventors

Application

No. 527003 filed on 09/12/1995

US Classes:

257/355, With overvoltage protective means257/356, For protecting against gate insulator breakdown257/357, In complementary field effect transistor integrated circuit257/358, Including resistor element257/360, Protection device includes insulated gate transistor structure (e.g., combined with resistor element)361/90Overvoltage and undervoltage

Examiners

Primary: Fahmy, Wael
Assistant: Abraham, Fetsum

Attorney, Agent or Firm

Keck, Mahin & Cate

International Class

H01L 023/62

Foreign Application Priority Data

1994-11-08 KR

Abstract

The present invention discloses a high voltage cut-off semiconductor device that can prevent unstable supply voltage of several volts that is not cut off by a conventional electrostatic discharge protection circuit from being applied to an internal circuit and apply only stable supply voltage to the internal circuit, thereby enhancing the characteristics of the semiconductor device and shortening the channel length of the transistors forming the internal circuit by suing a constant voltage circuit having a zener diode.