U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Method and apparatus for wavevector selective pyrometry in rapid thermal processing systems

Patent 5628564 Issued on May 13, 1997. Estimated Expiration Date: Icon_subject March 28, 2015. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

Method for measuring temperature of semiconductor substrate and apparatus therefor
Patent #: 4890245
Issued on: 12/26/1989
Inventor: Yomoto, et al.

Emissivity correction apparatus and method
Patent #: 4919542
Issued on: 04/24/1990
Inventor: Nulman, et al.

Method and apparatus for real-time wafer temperature measurement using infrared pyrometry in advanced lamp-heated rapid thermal processors
Patent #: 4956538
Issued on: 09/11/1990
Inventor: Moslehi

Emissivity calibration apparatus and method
Patent #: 4989991
Issued on: 02/05/1991
Inventor: Pecot, et al.

Bichannel radiation detection method
Patent #: 5114242
Issued on: 05/19/1992
Inventor: Gat, et al.

Pyrometer apparatus and method
Patent #: 5188458
Issued on: 02/23/1993
Inventor: Thompson, et al.

Emissivity independent temperature measurement systems
Patent #: 5226732
Issued on: 07/13/1993
Inventor: Nakos, et al.

Semiconductor processing technique, including pyrometric measurement of radiantly heated bodies
Patent #: 5305416
Issued on: 04/19/1994
Inventor: Fiory

Pyrometer apparatus for use in rapid thermal processing of semiconductor wafers
Patent #: 5308161
Issued on: 05/03/1994
Inventor: Stein

Optical apparatus and method for measuring temperature of a substrate material with a temperature dependent band gap
Patent #: 5388909
Issued on: 02/14/1995
Inventor: Johnson, et al.

More ...

Inventors

Assignee

Application

No. 412278 filed on 03/28/1995

US Classes:

374/121, By thermally emitted radiation374/126Having emissivity compensating or specified radiating surface

Examiners

Primary: Bennett, G. Bradley

Attorney, Agent or Firm

Foreign Patent References

  • WO90/12295 WO. 10/13/1990
  • WO92/12405 WO. 07/13/1992
  • WO94/00744 WO. 01/13/1994

International Class

G01J 005/08

Foreign Application Priority Data

1994-04-26 DE

Abstract

A method and apparatus for optical pyrometry in a Rapid Thermal Processing (RTP) System, whereby the radiation used to heat the object to be processed in the RTP system is in part specularly reflected from specularly reflecting surfaces and is incident on the object with a particular angular distribution, and the thermal radiation from the object is measured at an angles different from the angle where the incident radiation specularly reflected from the surface of the object is a maximum.

Other References

  • K. L. Knutson et al., Modeling of 3-dimensional effects on temperature uniformity in RTP of 8" wafers., IEEE Trans. On Semiconductor Manufacturing 7, 68, (1994
PatentsPlus Images
Enhanced PDF formats
loading...
PatentsPlus: add to cart
PatentsPlus: add to cartSearch-enhanced full patent PDF image
$9.95more info
PatentsPlus: add to cart
PatentsPlus: add to cartIntelligent turbocharged patent PDFs with marked up images
$18.95more info
 
Sign InRegister
Username  
Password   
forgot password?