Patent ReferencesMethod for measuring temperature of semiconductor substrate and apparatus therefor Emissivity correction apparatus and method Method and apparatus for real-time wafer temperature measurement using infrared pyrometry in advanced lamp-heated rapid thermal processors Emissivity calibration apparatus and method Bichannel radiation detection method Pyrometer apparatus and method Emissivity independent temperature measurement systems Semiconductor processing technique, including pyrometric measurement of radiantly heated bodies Pyrometer apparatus for use in rapid thermal processing of semiconductor wafers Optical apparatus and method for measuring temperature of a substrate material with a temperature dependent band gap InventorsAssigneeApplicationNo. 412278 filed on 03/28/1995US Classes:374/121, By thermally emitted radiation374/126Having emissivity compensating or specified radiating surfaceExaminersPrimary: Bennett, G. BradleyAttorney, Agent or FirmForeign Patent References
International ClassG01J 005/08Foreign Application Priority Data1994-04-26 DEAbstractA method and apparatus for optical pyrometry in a Rapid Thermal Processing (RTP) System, whereby the radiation used to heat the object to be processed in the RTP system is in part specularly reflected from specularly reflecting surfaces and is incident on the object with a particular angular distribution, and the thermal radiation from the object is measured at an angles different from the angle where the incident radiation specularly reflected from the surface of the object is a maximum.Other References
Field of SearchBy thermally emitted radiationTransparent material measurement or compensation (e.g., spectral line, gas, particulate suspension Having emissivity compensating or specified radiating surface Optical system structure (e.g., lens) Change of optical property Infrared responsive With irradiation or heating of object or material Measuring infrared radiation reflected from sample OPTICAL PYROMETERS | |