Thin film multi-layer oxygen diffusion barrier consisting of refractory metal, refractory metal aluminide, and aluminum oxide
Patent 5625233 Issued on April 29, 1997. Estimated Expiration Date: 
January 13, 2015. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
January 13, 2015. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesRefractory aluminides Interconnection structure of semiconductor integrated circuit device Semiconductor device having a multi-layer metal contact Integrated circuit having silicide-nitride based multi-layer metallization Patent #: 5421974 InventorsAssigneeApplicationNo. 372633 filed on 01/13/1995US Classes:257/771, Alloy containing aluminum257/295, With ferroelectric material layer257/E21.011, Formation of electrode (EPO)257/E21.021, Having multilayers, e.g., comprising barrier layer and metal layer (EPO)257/E21.584, Barrier, adhesion or liner layer (EPO)257/E23.16Additional layers associated with aluminum layers, e.g., adhesion, barrier, cladding layers (EPO)ExaminersPrimary: Saadat, MahshidAssistant: Tang, Alice W. Attorney, Agent or FirmForeign Patent References
International ClassesH01L 023/482H01L 029/45 AbstractThe use of a bi-layer thin film structure consisting of aluminum or aluminide on a refractory metal layer as a diffusion barrier to oxygen penetration at high temperatures for preventing the electrical and mechanical degradation of the refractory metal for use in applications such as a capacitor electrode for high dielectric constant materials.Other References
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