Did You Know...
...that the inventor of the electric motor was a blacksmith named Thomas Davenport? Described as "a brilliantly unsuccessful inventor", Davenport invented the first rotary electric motor. In 1836 he headed out -- on foot -- from his Vermont home to file a patent application at the Patent Office in Washington, D.C. By the time he got there, he had squandered away his money and couldn't afford the $30 filing fee so he turned around and went home. When he later mailed in his application with money he'd raised, the Patent office was destroyed in a fire. He did finally get credit for his invention on Feb. 5, 1837.
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US Patent 5625217 - MOS transistor having a composite gate electrode and method of fabrication
US Patent Issued on April 29, 1997
Estimated Patent Expiration Date:
February 2, 2015Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
Estimated Patent Expiration Date:
February 2, 2015Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.AbstractA novel, reliable, high performance MOS transistor with a composite gate electrode which is compatible with standard CMOS fabrication processes. The composite gate electrode comprises a polysilicon layer formed on a highly conductive layer. The composite gate electrode is formed on a gate insulating layer which is formed on a silicon substrate. A pair of source/drain regions are formed in the substrate and are self-aligned to the outside edges of the composite gate electrode.Other References
| InventorsApplicationNo. 384352 filed on 02/02/1995US Classes:257/412, Gate electrode of refractory material (e.g., polysilicon or a silicide of a refractory or platinum group metal)257/344, With lightly doped portion of drain region adjacent channel (e.g., LDD structure)257/408, Including lightly doped drain portion adjacent channel (e.g., lightly doped drain, LDD device)257/413, Polysilicon laminated with silicide257/E21.201, Conductor layer next to insulator is Si or Ge or C and their non-Si alloys (EPO)257/E21.202, Conductor layer next to the insulator is single metal, e.g., Ta, W, Mo, Al (EPO)257/E21.203, Conductor layer next to insulator is metallic silicide (Me Si) (EPO)257/E21.204, Conductor layer next to insulator is non-MeSi composite or compound, e.g., TiN (EPO)257/E21.435, Lateral single gate single channel silicon transistor with both lightly doped source and drain extensions and source and drain self-aligned to sides of gate, e.g., LDD MOSFET, DDD MOSFET (EPO)257/E29.158, Elemental metal gate conductor material (e.g., W, Mo) (EPO)257/E29.16, Gate conductor material being compound or alloy material (e.g., organic material, TiN, MoSi 2 ) (EPO)257/E29.161, Silicide (EPO)257/E29.255With field effect produced by insulated gate (EPO)Field of Search257/336, With lightly doped portion of drain region adjacent channel (e.g., LDD structure)257/344, With lightly doped portion of drain region adjacent channel (e.g., LDD structure)257/408, Including lightly doped drain portion adjacent channel (e.g., lightly doped drain, LDD device)257/412, Gate electrode of refractory material (e.g., polysilicon or a silicide of a refractory or platinum group metal)257/754, At least one layer of silicide or polycrystalline silicon257/757, Silicide of refractory or platinum group metal257/763, At least one layer of molybdenum, titanium, or tungsten257/764, Alloy containing molybdenum, titanium, or tungsten257/770, Molybdenum, tungsten, or titanium or their silicides257/346, Gate electrode overlaps the source or drain by no more than depth of source or drain (e.g., self-aligned gate)257/387, Gate electrode overlaps at least one of source or drain by no more than depth of source or drain (e.g., self-aligned gate)257/413Polysilicon laminated with silicideExaminersPrimary: Loke, StevenAttorney, Agent or FirmUS Patent References3576478, 4570328, Method of producing titanium nitride MOS device gate electrodeIssued on: 02/18/1986 Inventor: Price , et al.5097301Composite inverse T-gate metal oxide semiconductor device and method of fabrication Issued on: 03/17/1992 Inventor: Sanchez Foreign Patent References
International ClassesH01L 029/76H01L 029/94 H01L 031/062 H01L 031/113 |
