Method of manufacturing semiconductor device having different orientations of crystal channel growth
August 23, 2015. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References Re33321 Method of making high speed semiconductor device having a silicon-on-insulator structure Low temperature crystallization and pattering of amorphous silicon films Low temperature crystallization and patterning of amorphous silicon films on electrically insulating substrates Semiconductor device having improved crystal orientation Semiconductor device having transistors with different orientations of crystal channel growth with respect to current carrier direction Patent #: 5534716 InventorsAssigneeApplicationNo. 518318 filed on 08/23/1995US Classes:438/150, Specified crystallographic orientation257/E21.703, Substrate is semiconductor body (EPO)438/30, Liquid crystal component438/166, Including recrystallization step438/982VARYING ORIENTATION OF DEVICES IN ARRAYExaminersPrimary: Bowers, Charles L. Jr.Assistant: Radomsky, Leon Attorney, Agent or FirmForeign Patent References
International ClassH01L 021/84Foreign Application Priority Data1993-08-10 JPAbstractIn an active matrix type liquid-crystal display device, in a peripheral circuit portion, there is arranged a TFT having a high mobility and capable of allowing a large amount of on-state current to flow. In a pixel portion, there is arranged a TFT having a small off-state current. These TFTs having different characteristics are constituted by using crystalline silicon film whose crystal has grown in a direction parallel with a substrate. That is, an angle formed between a crystal growing direction and a carrier moving direction are made different from each other, thereby to control a resistance imposed on the carriers when moving to determine the characteristics of the TFT. For example, when the crystal growing direction coincides with the carrier moving direction, high mobility can be given to the carriers. Further, when the crystal growing direction is arranged perpendicular to the carrier moving direction, the off-state current can be lowered.Other References
Field of SearchField effect device in amorphous semiconductor materialNon-single crystal, or recrystallized, material with specified crystal structure (e.g., specified crystal size or orientation) Non-single crystal, or recrystallized, material containing non-dopant additive, or alloy of semiconductor materials (e.g., Ge x Si 1- x, polycrystalline silicon with dangling bond modifier) Field effect device in non-single crystal, or recrystallized, Semiconductor material Recrystallized semiconductor material | |
