Showerhead for uniform distribution of process gas
March 29, 2016. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesPlasma reactor apparatus Method for process control of a plasma reaction Plasma reactor apparatus Plasma processor and method for IC fabrication Plasma processing apparatus Processing for stripping organic material Plasma density controller for semiconductor device processing equipment Arrangement for the production of a plasma Apparatus for and method of surface treatment for microelectronic devices Apparatus for cleaning a substrate with metastable helium InventorAssigneeApplicationNo. 623867 filed on 03/29/1996US Classes:118/723ME, Producing energized gas remotely located from substrate118/723ER, Producing energized gas remotely located from substrate427/575Generated by microwave (i.e., 1mm to 1m)ExaminersPrimary: Breneman, R. BruceAssistant: Chang, Jon Attorney, Agent or FirmInternational ClassC23C 016/00AbstractA showerhead includes a plurality of gas inlets for supplying process gas to a semiconductor substrate surface, and a plurality of gas outlets for removing gas and volatile byproducts produced as a result of reaction of the process gas with the substrate surface. Each gas inlet is concentrically positioned within a respective gas outlet. The showerhead improves the utilization of process gas species at the substrate surface by providing gas flow in a direction perpendicular to the substrate surface and avoiding flow of the process gas or volatile byproducts laterally across the substrate surface. The showerhead is useful for uniform stripping of a mask of organic material by direct contact of the incoming reactive gas with the substrate surface and immediate removal of the process gas and volatile byproducts through the concentrically arranged gas outlets.Field of SearchProducing energized gas remotely located from substrateWith magnet (e.g., electron cyclotron resonance, etc.) with magnet (e.g., electron cyclotron resonance, etc.) Producing energized gas remotely located from substrate Producing energized gas remotely located from substrate Multiple gas energizing means associated with one deposition site (i.e., excluding substrate heater as an energizing means) Generated by microwave (i.e., 1mm to 1m) Specified gas feed or withdrawal Specified gas feed or withdrawal Microwave excitation Plasma cleaning | |
