U.S. patents available from 1976 to present.
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Multi-port random access memory

Patent 5612923 Issued on March 18, 1997. Estimated Expiration Date: Icon_subject May 9, 2016. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

Semiconductor memory device having a plurality of writing and reading ports for decreasing hardware amount
Patent #: 5355335
Issued on: 10/11/1994
Inventor: Katsuno

Four port RAM cell
Patent #: 5434818
Issued on: 07/18/1995
Inventor: Byers, et al.

Multi-port static random access memory with fast write-thru scheme Patent #: 5473574
Issued on: 12/05/1995
Inventor: Clemen, et al.

Inventors

Assignee

Application

No. 644081 filed on 05/09/1996

US Classes:

365/230.05, Multiple port access365/230.06, Particular decoder or driver circuit365/233Sync/clocking

Examiners

Primary: Nelms, David C.
Assistant: Hoang, Huan

Attorney, Agent or Firm

International Class

G11C 008/00

Abstract

Disclosed is a design detail for an innovative time multiplexed read port architecture implemented as part of a high-speed 9-port time slot interchange random access memory. It provides a practical, high-speed, low-power and area efficient read port structure to allow eight random access reads per clock cycle. Because all timing is internally generated from a single rising clock transition of a system clock signal, no special control or clocking is required externally to the memory.

Other References

  • 1985 IEEE International Solid-State Circuits Conference, SESSION III: Special Application Memories, "A 2K×9 Dual Port Memory", Barber et al., Feb. 1985, pp. 44-45 and 302
  • 1990 Symposium on VLSI Circuits, "Pipelined, Time-Sharing Access Technique for a Highly Integrated Multi-Port Memory", Tsuneo Matsumura et al, NTT LSI Laboratories, Feb. 1990, pp. 107-108
  • IEEE Journal of Solid State Circuits, Endo et al. vol. 26, No. 4, Apr. 1991, "Pipelined, Time-Sharing Access Technique for an Integrated Multiport Memory", pp. 549-554
  • IEEE Journal of Solid-State Circuits, vol. 28, No. 3, Mar. 1993, "A 180-MHz 0.8-μm BiCMOS Modular Memory Family of DRAM and Multiport SRAM", Allan L. Silburt et al, pp. 222-232
  • Fujitsu Sci. Tech. J., 24, 4, pp. 293-300 (Dec. 1988), "Self-Timed RAM: STRAM", C. Ohn
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