Process for thin film formation
June 7, 2015. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesAluminum deposition on semiconductor bodies Plasma CVD of aluminum films Process for forming deposited film by use of alkyl aluminum hydride Deposited film formation method utilizing selective deposition by use of alkyl aluminum hydride Process for forming metal deposited film containing aluminum as main component by use of alkyl hydride Metal film forming method Selective chemical vapor deposition of aluminum, aluminum CVD materials and process for preparing the same Patent #: 5217756 InventorsApplicationNo. 487580 filed on 06/07/1995US Classes:438/676, Utilizing electromagnetic or wave energy257/E21.171, Selective deposition (EPO)438/677Pretreatment of surface to enhance or retard depositionExaminersPrimary: Kunemund, RobertAttorney, Agent or FirmForeign Patent References
International ClassH01L 021/285Foreign Application Priority Data1992-04-28 JPAbstractA process for thin film formation comprises selectively irradiating with an energy ray a substrate to the surface of which a surface treatment for providing hydrogen atoms is applied to thereby form an irradiated region and a non-irradiated region on the surface of the substrate, and forming a thin film selectively on the non-irradiated region.Other References
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