Ink-jet type recording head and monolithic integrated circuit suitable therfor
April 15, 2016. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesLiquid jet recording process and liquid jet recording head Ink jet recording method Liquid jet recording device Droplet generating method and apparatus thereof Liquid jet recording head Ink-belt bubble propulsion printer Bubble jet recording method and apparatus in which a heating element generates bubbles in a liquid flow path to project droplets Bubble jet recording method and apparatus in which a heating element generates bubbles in multiple liquid flow paths to project droplets Thermal ink drop on demand devices on a single chip with vertical integration of driver device Integrated thermal printhead and driving circuit Inventors
AssigneeApplicationNo. 632727 filed on 04/15/1996US Classes:347/59, Integrated257/370, Combined with bipolar transistor257/371Complementary transistors in wells of opposite conductivity types more heavily doped than the substrate region in which they are formed, e.g., twin wellsExaminersPrimary: Fuller, Benjamin R.Assistant: Hallacher, Craig A. Attorney, Agent or FirmForeign Patent References
International ClassesB41J 002/05H01L 029/94 H01L 027/092 Foreign Application Priority Data1992-12-28 JPAbstractA recording head comprises a liquid emission member having an orifice through which an ink is emitted, an electro-thermal converter element for generating a thermal energy which is utilized to emit the ink introduced into the liquid emission member, and a functional element disposed on a same substrate on which the electro-thermal converter element is disposed for driving and controlling the electro-thermal converter element.The functional element includes an NPN bipolar transistor for driving the electrothermal converter element and a CMOS transistor composed of an NMOS transistor and a PMOS transisfor for controlling an operation of the bipolar transistor.The NMOS transistor being formed in a P well diffusion layer in an N- type epitaxial growth layer which is grown on a surface of a P type semiconductor substrate.The PMOS transistor being formed in an N well diffusion layer in the N- type epitaxial growth layer which is grown on the surface of the P type semiconductor substrate.Other References
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