Liquid jet recording process and liquid jet recording head
Ink jet recording method
Liquid jet recording device
Droplet generating method and apparatus thereof
Liquid jet recording head
Ink-belt bubble propulsion printer
Bubble jet recording method and apparatus in which a heating element generates bubbles in a liquid flow path to project droplets
Bubble jet recording method and apparatus in which a heating element generates bubbles in multiple liquid flow paths to project droplets
Thermal ink drop on demand devices on a single chip with vertical integration of driver device
Integrated thermal printhead and driving circuit
ApplicationNo. 632727 filed on 04/15/1996
US Classes:347/59, Integrated257/370, Combined with bipolar transistor257/371Complementary transistors in wells of opposite conductivity types more heavily doped than the substrate region in which they are formed, e.g., twin wells
ExaminersPrimary: Fuller, Benjamin R.
Assistant: Hallacher, Craig A.
Attorney, Agent or Firm
Foreign Patent References
International ClassesB41J 002/05
Foreign Application Priority Data1992-12-28 JP
AbstractA recording head comprises a liquid emission member having an orifice through which an ink is emitted, an electro-thermal converter element for generating a thermal energy which is utilized to emit the ink introduced into the liquid emission member, and a functional element disposed on a same substrate on which the electro-thermal converter element is disposed for driving and controlling the electro-thermal converter element.The functional element includes an NPN bipolar transistor for driving the electrothermal converter element and a CMOS transistor composed of an NMOS transistor and a PMOS transisfor for controlling an operation of the bipolar transistor.The NMOS transistor being formed in a P well diffusion layer in an N- type epitaxial growth layer which is grown on a surface of a P type semiconductor substrate.The PMOS transistor being formed in an N well diffusion layer in the N- type epitaxial growth layer which is grown on the surface of the P type semiconductor substrate.