Patent ReferencesPlasma reactor apparatus Apparatus for plasma chemical vapor deposition Apparatus for producing semiconductors Apparatus for gas source molecular beam epitaxy Patent #: 5252131 InventorsApplicationNo. 634372 filed on 04/18/1996US Classes:118/725, Substrate heater118/715, GAS OR VAPOR DEPOSITION118/724By means to heat or coolExaminersPrimary: Bueker, RichardAttorney, Agent or FirmForeign Patent References
International ClassC23C 016/00Foreign Application Priority Data1995-04-20 JPAbstractA shower head of a metal CVD apparatus has a raw gas passage and a reduction gas passage for independently and respectively supplying a raw gas and a reduction gas into a process chamber. The shower head includes upper, middle and lower blocks which are formed independently of each other. Each of the raw gas passage and the reduction gas passage is branched from the upper block to the lower block. A coolant passage is formed in the lower block near supply outlets of the raw gas and the reduction gas for cooling the supply outlets. A heater is arranged in the upper and middle blocks for heating the raw gas passage. | |