Method and apparatus for endpoint detection in a chemical/mechanical process for polishing a substrate
November 30, 2014. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesTool life monitoring and tracking apparatus Method of endpoint detection during chemical/mechanical planarization of semiconductor wafers Apparatus for endpoint detection during mechanical planarization of semiconductor wafers Method for preventing damage to tissue during ultrasonic surgery Polishing pad conditioning apparatus for wafer planarization process Audio end point detector for chemical-mechanical polishing and method therefor Endpoint detection apparatus and method for chemical/mechanical polishing In-situ endpoint detection method and apparatus for chemical-mechanical polishing using low amplitude input voltage Patent #: 5337015 InventorsApplicationNo. 347813 filed on 11/30/1994US Classes:451/8, With indicating451/5, Computer controlled451/41Glass or stone abradingExaminersPrimary: Rose, Robert A.Attorney, Agent or FirmInternational ClassesB24B 049/00B24B 019/22 AbstractA method for polishing the surface of a substrate that overcomes the problems inherent in the prior art. During the polishing of a substrate, a quantity is calculated which is approximately proportional to a share of the total energy the polisher is consuming. Once this calculated quantity reaches a predetermined amount, it is detected. | |
