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Semiconductor integrated circuit device having power reduction mechanism

Patent 5583457 Issued on December 10, 1996. Estimated Expiration Date: Icon_subject February 8, 2014. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

Semiconductor integrated circuit with a response time compensated with respect to temperature
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Inventor: Iwahashi ,   et al.

Current-mirror-biased pre-charged logic circuit
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Issued on: 01/10/1989
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Semiconductor circuit with low power consumption having emitter-coupled logic or differential amplifier
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Output buffer circuits for reducing noise
Patent #: 5051625
Issued on: 09/24/1991
Inventor: Ikeda, et al.

CMOS type input buffer circuit for semiconductor device and semiconductor device with the same
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Issued on: 03/31/1992
Inventor: Yoshimori, et al.

Low power CMOS bus receiver with small setup time
Patent #: 5115150
Issued on: 05/19/1992
Inventor: Ludwig

CMOS buffer circuit which is not influenced by bounce noise
Patent #: 5179298
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CMOS clocked logic decoder
Patent #: 5258666
Issued on: 11/02/1993
Inventor: Furuki

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Inventors

Assignee

Application

No. 193765 filed on 02/08/1994

US Classes:

326/121, CMOS326/17, ACCELERATING SWITCHING326/33, Bias or power supply level stabilization326/83, Field-effect transistor327/544Power conservation or pulse type

Examiners

Primary: Westin, Edward P.
Assistant: Santamauro, Jon

Attorney, Agent or Firm

Foreign Patent References

  • 2-246516 JP. 10/13/1990
  • 64-186715 JP. 03/13/1991

International Classes

H03K 019/094.8
H03K 019/01

Foreign Application Priority Data

1992-04-14 JP

Abstract

A semiconductor integrated circuit device is composed of logic gates each provided with at least two MOS transistors. The logic gates are connected to a first potential point and a second potential point. The semiconductor integrated circuit device includes a current control device connected between the logic gate and the first potential point and/or between the logic gate and the second potential point for controlling a value of a current flowing in the logic gate depending on an operating state of the logic gate. The circuit can be used in devices that cycle in operation between high and low power consumption modes, such as microprocessors that have both an operation mode and a low power back-up or sleep mode used for power reduction.

Other References

  • 1989 International Symposium on VLSI Technology, Systems and Applications, Proceedings of Technical Papers, pp. 188-192 (May 1989)
  • ISSCC Digest of Technical Papers, pp. 248-249, Feb. 1989
  • Reviews and Prospects of Deep Sub-Micron DRAM Technology, 1991 International Conference on Solid State Devices and Materials, Yokohama, 1991, pp. 468-471
  • Intro to VLSI Systems, "Scaling Down the Dimensions of MOS Circuits and Systems," Mead et al, pp. 33-37, 198
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