Patent ReferencesHeterojunction bipolar transistors and method of manufacture Logic circuit uising transistor having negative differential conductance Patent #: 5260609 InventorAssigneeApplicationNo. 425664 filed on 04/17/1995US Classes:257/25, Employing resonant tunneling257/197, Bipolar transistor257/198, Wide band gap emitter257/563, With multiple separately connected emitter, collector, or base regions in same transistor structure257/618, PHYSICAL CONFIGURATION OF SEMICONDUCTOR (E.G., MESA, BEVEL, GROOVE, ETC.)257/E29.192Resonant tunneling transistors (EPO)ExaminersPrimary: Saadat, MahshidAttorney, Agent or FirmForeign Patent References
International ClassesH01L 029/06H01L 031/032.8 H01L 029/00 AbstractThis is a method of generating noise comprising the step of switching a plurality of resonant tunneling diodes each located in the emitter or base of a multi finger transistor such that each of the resonant tunneling diodes switches at a different input voltage. Other devices and methods are also disclosed.Field of SearchEmploying resonant tunnelingHETEROJUNCTION DEVICE Bipolar transistor Wide band gap emitter With multiple separately connected emitter, collector, or base regions in same transistor structure PHYSICAL CONFIGURATION OF SEMICONDUCTOR (E.G., MESA, BEVEL, GROOVE, ETC.) Multiple base or collector regions With multiple collectors or emitters RESPONSIVE TO NON-ELECTRICAL SIGNAL (E.G., CHEMICAL, STRESS, LIGHT, OR MAGNETIC FIELD SENSORS) Electromagnetic or particle radiation | |