Superlattice avalance photodiode
Patent 5552629 Issued on September 3, 1996. Estimated Expiration Date: 
March 22, 2015. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
March 22, 2015. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesProcess for fabricating an avalanche photodiode Avalanche photodiode with moisture resistant passivation coating disposed to cover the outer periphery of the photodiode body except at a selected top contact area Patent #: 5288989 InventorAssigneeApplicationNo. 408903 filed on 03/22/1995US Classes:257/438, Avalanche junction257/186, Avalanche photodetection structure257/E31.033, Multiple quantum well structure (EPO)257/E31.064Heterostructure (e.g., surface absorption or multiplication (SAM) layer) (EPO)ExaminersPrimary: Meier, Stephen D.Attorney, Agent or FirmForeign Patent References
International ClassesH01L 031/107H01L 029/74 H01L 031/111 Foreign Application Priority Data1994-03-22 JPAbstractA semiconductor device according to the invention includes an electric field buffer layer, a superlattice multiplication layer and a cap layer, which are laminated. Around a mesa side surface, a round shape p+ dopant to a depth below the field buffer layer, and then the cap layer is etched so that the p+ region is not in contact with the cap layer. This creates a distance of several μm in-between the inner surface of the p+ region and the external surface of the cap layer.Other References
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