Process for fabricating an avalanche photodiode
Avalanche photodiode with moisture resistant passivation coating disposed to cover the outer periphery of the photodiode body except at a selected top contact area Patent #: 5288989
ApplicationNo. 408903 filed on 03/22/1995
US Classes:257/438, Avalanche junction257/186, Avalanche photodetection structure257/E31.033, Multiple quantum well structure (EPO)257/E31.064Heterostructure (e.g., surface absorption or multiplication (SAM) layer) (EPO)
ExaminersPrimary: Meier, Stephen D.
Attorney, Agent or Firm
Foreign Patent References
International ClassesH01L 031/107
Foreign Application Priority Data1994-03-22 JP
AbstractA semiconductor device according to the invention includes an electric field buffer layer, a superlattice multiplication layer and a cap layer, which are laminated. Around a mesa side surface, a round shape p+ dopant to a depth below the field buffer layer, and then the cap layer is etched so that the p+ region is not in contact with the cap layer. This creates a distance of several μm in-between the inner surface of the p+ region and the external surface of the cap layer.