U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Biased FET mixer

Patent 5513390 Issued on April 30, 1996. Estimated Expiration Date: Icon_subject November 9, 2013. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

3700928

Programmable two-port microwave network
Patent #: 4502028
Issued on: 02/26/1985
Inventor: Leake

High frequency broad-band mixing circuit including an electrolytic capacitor in parallel with a local oscillator input port
Patent #: 4979233
Issued on: 12/18/1990
Inventor: Kawahata

High level wide band RF mixer
Patent #: 5027163
Issued on: 06/25/1991
Inventor: Dobrovolny

Transmission line transformer with DC isolation
Patent #: 5130678
Issued on: 07/14/1992
Inventor: Edwards

Center-tapped coil-based tank circuit for a balanced mixer circuit
Patent #: 5140705
Issued on: 08/18/1992
Inventor: Kosuga

Biasing network for use with field effect transistor ring mixer
Patent #: 5153469
Issued on: 10/06/1992
Inventor: Petted, et al.

Double-balanced high level wide band RF mixer Patent #: 5280648
Issued on: 01/18/1994
Inventor: Dobrovolny

Inventor

Assignee

Application

No. 149671 filed on 11/09/1993

US Classes:

455/323, Particular frequency conversion structure or circuitry327/113, Frequency or repetition rate conversion or control333/24R, COUPLING NETWORKS333/245, LONG LINE ELEMENTS AND COMPONENTS455/333Transistor or integrated circuit

Examiners

Primary: Urban, Edward F.

Attorney, Agent or Firm

International Class

H04B 001/26

Abstract

A mixer including a "reflection" transmission line transformer having at least first and second ports. The ports are connected such that nearly complete coupling of energy between the ports relies on substantially complete reflection of energy at a reference plane of the transformer. In a preferred implementation there is produced at the first port an intermediate frequency (IF) signal and received a DC bias signal via an IF balun. At the second port there is inputted a radio frequency (RF) signal through an RF balun.The DC bias signal will preferably be provided to a set of phase-selecting GaAs MESFET transistors operatively connected between an LO balun and a third port of the reflection transformer. In the preferred implementation the MESFET transistors are realized using an MMIC.

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