Compound semiconductor device Patent #: 5313093
ApplicationNo. 461025 filed on 06/05/1995
US Classes:257/194, Doping on side of heterojunction with lower carrier affinity (e.g., high electron mobility transistor (HEMT))257/284, Schottky gate in groove257/615, Group III-V compound (e.g., InP)257/745, Contact for III-V material257/E29.25With more than one donor layer (EPO)
ExaminersPrimary: Prenty, Mark V.
Attorney, Agent or Firm
Foreign Patent References
International ClassH01L 031/032.8
Foreign Application Priority Data1994-06-06 JP
AbstractA buffer layer 2 composed of undoped GaAs or undoped AlGaAs, an n-type AlGaAs electron supply layer 3, an undoped InGaAs channel layer 4, an AlGaAs electron supply layer 5 composed of n-type AlGaAs or undoped AlGaAs, an n-type InGaP contact lower layer 16, and an n-type GaAs contact upper layer 7 are formed on a semiinsulating GaAs substrate 1. A gate electrode is formed on the AlGaAs electron supply layer 5. A drain electrode and a source electrode are formed on the GaAs contact upper layer 7. Thus, in the FET with double-recess structure, the drain current can be increased and the gate breakdown voltage can be improved.