Field effect transistor
Patent 5504353 Issued on April 2, 1996. Estimated Expiration Date: 
June 5, 2015. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
June 5, 2015. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesCompound semiconductor device Patent #: 5313093 InventorAssigneeApplicationNo. 461025 filed on 06/05/1995US Classes:257/194, Doping on side of heterojunction with lower carrier affinity (e.g., high electron mobility transistor (HEMT))257/284, Schottky gate in groove257/615, Group III-V compound (e.g., InP)257/745, Contact for III-V material257/E29.25With more than one donor layer (EPO)ExaminersPrimary: Prenty, Mark V.Attorney, Agent or FirmForeign Patent References
International ClassH01L 031/032.8Foreign Application Priority Data1994-06-06 JPAbstractA buffer layer 2 composed of undoped GaAs or undoped AlGaAs, an n-type AlGaAs electron supply layer 3, an undoped InGaAs channel layer 4, an AlGaAs electron supply layer 5 composed of n-type AlGaAs or undoped AlGaAs, an n-type InGaP contact lower layer 16, and an n-type GaAs contact upper layer 7 are formed on a semiinsulating GaAs substrate 1. A gate electrode is formed on the AlGaAs electron supply layer 5. A drain electrode and a source electrode are formed on the GaAs contact upper layer 7. Thus, in the FET with double-recess structure, the drain current can be increased and the gate breakdown voltage can be improved.Other References
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