Methods for planarization and encapsulation of micromechanical devices in semiconductor processes
Patent 5504026 Issued on April 2, 1996. Estimated Expiration Date: 
April 14, 2015. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
April 14, 2015. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesTurbulent shear force microsensor Selective chemical vapor deposition of tungsten for microdynamic structures Method of producing microsensors with integrated signal processing Aligned wafer bonding Method for fabricating monolithic chip containing integrated circuitry and suspended microstructure Patent #: 5326726 InventorAssigneeApplicationNo. 422036 filed on 04/14/1995US Classes:438/50Physical stress responsiveExaminersPrimary: Chaudhari, ChandraAttorney, Agent or FirmInternational ClassH01L 021/784AbstractA method for fabricating a micromechanical device and a semiconductor circuit on a substrate includes the steps of forming the micromechanical device on a device area of the substrate, the micromechanical device being embedded in a sacrificial material, selectively depositing a planarization layer on the substrate in a circuit area thereof, forming the semiconductor circuit on the planarization layer in the circuit area and removing the sacrificial material from the embedded micromechanical device. In a preferred embodiment, the planarization layer is an epitaxial silicon layer. A protective cap may be formed over the micromechanical device, so that it is completely encapsulated and is thereby protected against particulate contamination.Other References
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