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"It is my heart-warmed and world-embracing Christmas hope and aspiration that all of us, the high, the low, the rich, the poor, the admired, the despised, the loved, the hated, the civilized, the savage (every man and brother of us all throughout the whole earth), may eventually be gathered together in a heaven of everlasting rest and peace and bliss, except the inventor of the telephone. "
Mark Twain ; Christmas greetings, 1890
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US Patent 5485420 - Static-random-access memory cell and an integrated circuit having a static-random-access memory cell
US Patent Issued on January 16, 1996
Estimated Patent Expiration Date:
July 21, 2014Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
Estimated Patent Expiration Date:
July 21, 2014Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.AbstractThe present invention includes an integrated circuit having a self-aligned contact that makes contact to both a region within the substrate and a capacitor plate of a capacitor that is adjacent to the doped region. The present invention also includes a static-random-access memory cell with a capacitor having a first plate and a second plate. The first plate includes a first plate section of a gate electrode of a transistor, and the second plate includes a first conductive member that is substantially coincident with the first plate section. The second plate may be formed over a gate electrode of a latch transistor or over a word line. The disclosure includes methods of forming the integrated circuit and the static-random-access memory cell.Other References
| InventorsAssigneeApplicationNo. 278465 filed on 07/21/1994US Classes:365/154, Flip-flop (electrical)257/277, With capacitive or inductive elements257/303, Stacked capacitor257/903, FET CONFIGURATION ADAPTED FOR USE AS STATIC MEMORY CELL257/E21.661, Static random access memory structures (SRAM) (EPO)365/149CapacitorsField of Search365/154, Flip-flop (electrical)365/149, Capacitors365/182, Insulated gate devices257/277, With capacitive or inductive elements257/303, Stacked capacitor257/903FET CONFIGURATION ADAPTED FOR USE AS STATIC MEMORY CELLExaminersPrimary: Nelms, David C.Assistant: Niranjan, F. Attorney, Agent or FirmUS Patent References4355455, Method of manufacture for self-aligned floating gate memory cellIssued on: 10/26/1982 Inventor: Boettcher4532609, Semiconductor memory device Issued on: 07/30/1985 Inventor: Iizuka4535426, Semiconductor memory device Issued on: 08/13/1985 Inventor: Ariizumi , et al.4590508, MOS static ram with capacitively loaded gates to prevent alpha soft errors Issued on: 05/20/1986 Inventor: Hirakawa , et al.4679171, MOS/CMOS memory cell Issued on: 07/07/1987 Inventor: Logwood , et al.4725981, Random access memory cell resistant to inadvertant change of state due to charged particles Issued on: 02/16/1988 Inventor: Rutledge4729002, Self-aligned sidewall gate IGFET Issued on: 03/01/1988 Inventor: Yamazaki4805147, Stacked static random access memory cell having capacitor Issued on: 02/14/1989 Inventor: Yamanaka , et al.4805148, High impendance-coupled CMOS SRAM for improved single event immunity Issued on: 02/14/1989 Inventor: Diehl-Nagle , et al.4879690, Static random access memory with reduced soft error rate Issued on: 11/07/1989 Inventor: Anami, et al.5073510, Fabrication method of contact window in semiconductor device Issued on: 12/17/1991 Inventor: Kwon, et al.5132771, Semiconductor memory device having flip-flop circuits Issued on: 07/21/1992 Inventor: Yamanaka, et al.5135881, Method of making random access memory device having memory cells each implemented by a stacked storage capacitor and a transfer transistor with lightly-doped drain structure Issued on: 08/04/1992 Inventor: Saeki5145799, Stacked capacitor SRAM cell Issued on: 09/08/1992 Inventor: Rodder5240872, Method of manufacturing semiconductor device having interconnection layer contacting source/drain regions Issued on: 08/31/1993 Inventor: Motonami, et al.5264391Method of forming a self-aligned contact utilizing a polysilicon layer Issued on: 11/23/1993 Inventor: Son, et al. Foreign Patent References
International ClassG11C 011/00 |
