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US Patent 5479384 - Optical storage device having a plurality of juxtaposed memory cells
US Patent Issued on December 26, 1995
Estimated Patent Expiration Date:
August 12, 2014Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
Estimated Patent Expiration Date:
August 12, 2014Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.AbstractThe invention relates to a read-write optical memory comprising a plurality of juxtaposed memory cells (11), each receiving a respective light beam (3). Each memory cell contains a storage medium (10), which includes a storage element (23) having stable optical states. The storage element (23) is divided into a number of memory points, and the optical state in a given memory point can be both changed and read by means of a light beam (3) directed towards the memory point. The memory can be implemented entirely without any movable mechanical parts and has a very short read-write time and an exceptionally high storage capacity. Parallel writing and reading of multibit words is possible.Other References
| InventorsAssigneeApplicationNo. 284595 filed on 08/12/1994US Classes:369/14, SIMULTANEOUS DIVERSE TYPES OF STORAGE OR RETRIEVAL365/109, Photoconductive and ferroelectric365/117, Ferroelectric365/145FerroelectricField of Search369/14, SIMULTANEOUS DIVERSE TYPES OF STORAGE OR RETRIEVAL369/15, ALTERNATIVE DIVERSE TYPES OF STORAGE OR RETRIEVAL369/273, Combined with diverse art structure369/274, Composite (e.g., package with preview record)369/275.3, Track data format/layout369/280, Specific disc profile369/281, With interdisc coupling369/284, Radiation beam modified or controlling (e.g., photosensitve, optical track)369/288, Specified material365/117, Ferroelectric365/109, Photoconductive and ferroelectric365/145, Ferroelectric365/112, Photoconductive365/118, Electron beam365/121, Polarization365/122, Magneto-optical365/128, Electron beams365/134, Continuous cells365/140Multiaperture cellExaminersPrimary: Epps, GeorgiaAssistant: Dinh, Tan Attorney, Agent or FirmUS Patent References3703137, 3868652, 4101975, Optical memory with storage in three dimensionsIssued on: 07/18/1978 Inventor: Brody4247914, Optical memory with fiber optic light guide Issued on: 01/27/1981 Inventor: Brody4250567, Photovoltaic-ferroelectric beam accessed memory Issued on: 02/10/1981 Inventor: Brody5051950, Read/write optical memory Issued on: 09/24/1991 Inventor: Evans, Jr., et al.5060191, Ferroelectric memory Issued on: 10/22/1991 Inventor: Nagasaki, ;, , , --> Nagasaki, et al.5065378, System for reproducing a signal recorded in a magnetic recording medium by using a magnetostatic wave Issued on: 11/12/1991 Inventor: Oda, et al.5179533, Read/write optical memory Issued on: 01/12/1993 Inventor: Bullington, et al.5327373Optoelectronic memories with photoconductive thin films Issued on: 07/05/1994 Inventor: Liu, et al. Foreign Patent References
International ClassesG11B 013/04G11C 011/42 Foreign Application Priority Data1992-02-18 SE |
