U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Optical storage device having a plurality of juxtaposed memory cells

Patent 5479384 Issued on December 26, 1995. Estimated Expiration Date: Icon_subject August 12, 2014. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

3703137

3868652

Optical memory with storage in three dimensions
Patent #: 4101975
Issued on: 07/18/1978
Inventor: Brody

Optical memory with fiber optic light guide
Patent #: 4247914
Issued on: 01/27/1981
Inventor: Brody

Photovoltaic-ferroelectric beam accessed memory
Patent #: 4250567
Issued on: 02/10/1981
Inventor: Brody

Read/write optical memory
Patent #: 5051950
Issued on: 09/24/1991
Inventor: Evans, Jr., et al.

Ferroelectric memory
Patent #: 5060191
Issued on: 10/22/1991
Inventor: Nagasaki, ;, , , --> Nagasaki, et al.

System for reproducing a signal recorded in a magnetic recording medium by using a magnetostatic wave
Patent #: 5065378
Issued on: 11/12/1991
Inventor: Oda, et al.

Read/write optical memory
Patent #: 5179533
Issued on: 01/12/1993
Inventor: Bullington, et al.

Optoelectronic memories with photoconductive thin films Patent #: 5327373
Issued on: 07/05/1994
Inventor: Liu, et al.

Inventors

Assignee

Application

No. 284595 filed on 08/12/1994

US Classes:

369/14, SIMULTANEOUS DIVERSE TYPES OF STORAGE OR RETRIEVAL365/109, Photoconductive and ferroelectric365/117, Ferroelectric365/145Ferroelectric

Examiners

Primary: Epps, Georgia
Assistant: Dinh, Tan

Attorney, Agent or Firm

Foreign Patent References

  • 0164577 EP. 12/12/1985
  • 2659780 FR. 09/12/1991

International Classes

G11B 013/04
G11C 011/42

Foreign Application Priority Data

1992-02-18 SE

Abstract

The invention relates to a read-write optical memory comprising a plurality of juxtaposed memory cells (11), each receiving a respective light beam (3). Each memory cell contains a storage medium (10), which includes a storage element (23) having stable optical states. The storage element (23) is divided into a number of memory points, and the optical state in a given memory point can be both changed and read by means of a light beam (3) directed towards the memory point. The memory can be implemented entirely without any movable mechanical parts and has a very short read-write time and an exceptionally high storage capacity. Parallel writing and reading of multibit words is possible.

Other References

  • "Optical High Density direct Access Storage Device", IBM Technical Disclosure Bulletin vol. 31 No. 5 Oct.l 1988 2 Pages
  • Patent Abstract of Japan, vol. 10, No. 324, (P512) Abstract of Japanese patent publication No. A, 61-131247, Jun. 8, 198
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