Thin film high temperature silicide thermocouples
May 4, 2014. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References Re32207 2955145 3072733 3767469 Thermal converter Integrated semiconductor circuit structure and method for making it Method for making integrated semiconductor circuit structure with formation of Ti or Ta silicide Fast-response thermocouple probe Iron silicide thermoelectric conversion element Method of making multilayer photoelectrodes and photovoltaic cells InventorAssigneeApplicationNo. 237888 filed on 05/04/1994US Classes:136/239, Group IV element containing (C, Si, Ti, Ge, Zr, Sn, Hf, Pb)136/201, Processes136/225Having strip, film or plate-type thermocouplesExaminersPrimary: Walsh, Donald P.Assistant: Carroll, Chrisman D. Attorney, Agent or FirmInternational ClassH01L 035/20AbstractA high temperature resistant and corrosion resistant thermoelement for a thermocouple formed of a silicon base layer, a conductive thin film of a silicide of a transition metal such as titanium or molybdenum which is stable at temperatures in the range from 800° C. to at least 1000° C., preferably to at least about 1500° C., and an oxygen diffusion limiting silica overlayer, and a method of forming such a thermoelement by depositing a conductive transition metal silicide film over a silicon base layer and heat treating the film in an oxidizing gas atmosphere having a partial pressure of oxidizing gas sufficient to oxidize silicon atoms from the transition metal silicide to form a continuous SiO2 overlayer, but insufficient to oxidize transition metal atoms from the transition metal silicide, in which silicon atoms from the transition metal silicide layer which are oxidized to form the SiO2 overlayer are replaced by silicon atoms from the silicon base layer.Other References
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