Patent ReferencesCircuit for controlling a flash EEPROM having three distinct modes of operation by allowing multiple functionality of a single pin Device and method for defect handling in semi-conductor memory Flash EEPROM system and intelligent programming and erasing methods therefor Method for optimum erasing of EEPROM Flash eeprom system Patent #: 5297148 Inventors
AssigneeApplicationNo. 401942 filed on 03/10/1995US Classes:714/711, Spare row or column365/200, Bad bit714/710Replacement of memory spare location, portion, or segmentExaminersPrimary: Canney, Vincent P.Attorney, Agent or FirmForeign Patent References
International ClassG06F 011/00AbstractA file structure employed in a flash electrically erasable and programmable read only memory ("EEPROM") system and aspects of forming and using certain data fields within such a file structure. An array of rows and columns of EEPROM memory cells is divided into blocks of cells that are separately addressable for the purpose of erasing an entire block of cells at the same time. Each block contains several rows of cells with certain columns thereof storing a sector of data, typically 512 bytes of data, and other columns of cells within the same rows being used as spare cells to replace any defective sector data cells and store overhead (header) information about the block and the data sector. Such overhead information includes pointers to locations of any defective sector data cells within the block, whether the block has been mapped out in favor of another block, error correction codes for the sector data and the header information, and other similar types of information.Other References
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