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Method and apparatus for improving semiconductor wafer surface temperature uniformity

Patent 5467220 Issued on November 14, 1995. Estimated Expiration Date: Icon_subject February 18, 2014. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

Heater assembly for thermal processing of a semiconductor wafer in a vacuum chamber
Patent #: 4481406
Issued on: 11/06/1984
Inventor: Muka

Heating system for substrates
Patent #: 4975561
Issued on: 12/04/1990
Inventor: Robinson, et al.

Method for rapidly thermally processing a semiconductor wafer by irradiation using semicircular or parabolic reflectors
Patent #: 4981815
Issued on: 01/01/1991
Inventor: Kakoschke

Apparatus and method for substrate heating utilizing various infrared means to achieve uniform intensity
Patent #: 5179677
Issued on: 01/12/1993
Inventor: Anderson, et al.

Conical rapid thermal processing apparatus
Patent #: 5253324
Issued on: 10/12/1993
Inventor: Wortman, et al.

Method of thermally processing semiconductor wafers and an apparatus therefor Patent #: 5259883
Issued on: 11/09/1993
Inventor: Yamabe, et al.

Inventor

Application

No. 198726 filed on 02/18/1994

US Classes:

359/350, HAVING SIGNIFICANT INFRARED OR ULTRAVIOLET PROPERTY219/405, Including heat energy reflecting or directing means219/411, With infrared generating means359/853Light concentrating (e.g., heliostat, etc.), concave, or paraboloidal structure

Examiners

Primary: Lerner, Martin

Attorney, Agent or Firm

International Classes

G02B 005/10
F27D 011/00

Abstract

In a processing chamber that includes a wafer pedestal adapted to heat and cool a wafer during wafer processing, where the wafer is secured to the pedestal with a wafer clamp ring, a yoke having a surface in spaced facing relation with a wafer surface is positioned atop the clamp ring proximate to the wafer. The yoke surface includes a concave circumferential portion that is curved to provide a reflector, for example a parabolic or elliptical reflector, that is positioned having a focal point coincident with the wafer edge. Reflector positioning and spacing relative to the wafer surface encourage reflection of heat radiated from the edge portion of the wafer surface back to the wafer edge to mitigate thermal losses at the wafer edge and improve temperature uniformity across the surface of the wafer.

Other References

  • M. Taguchi, K. Koyama, Y. Sugano, Quarter Micron Hole Filling With SiN Side Walls By Aluminum High Temperature Sputtering, IEEE VMIC Conference, p. 219 (1992)
  • H. H. Hoang, F. S. Chen, M. Zamanian, G. A. Dixit, C. C. Wei, F. T. Lious, Reliability Study of Planarized Aluminum Metallization, IEEE VMIC Conference, p. 411 (1991)
  • C. S. Park, S. I. Lee, J. H. Park, J. H. Sohn, D. Chin, J. G. Lee, Al-PLAPH Process For Planarized Double Metal CMOS Application, IEEE VMIC Conference, p. 326 (1991)
  • H. Nishimura, T. Yamada, S. Ogawa, Reliable Submicron Vias Using Aluminum Alloy High Temperature Sputter Filling, IEEE VMIC Conference, p. 170 (1991)
  • H. Ono, Y. Ushiku, T. Yoda, Development of a Planarized Al-Si Contact Filling Technology, IEEE VMIC Conference, p. 76 (1991
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