U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Micromachined thermal switch

Patent 5463233 Issued on October 31, 1995. Estimated Expiration Date: Icon_subject June 23, 2013. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

2891124

2967269

3146378

3553540

3896309

Electro-thermal isolating switch
Patent #: 4038627
Issued on: 07/26/1977
Inventor: Johnson

Infrared imaging array employing metal tabs as connecting means
Patent #: 4695715
Issued on: 09/22/1987
Inventor: Malm

Thermally-actuated microminiature valve
Patent #: 5058856
Issued on: 10/22/1991
Inventor: Gordon, et al.

Thermal protector Patent #: 5235308
Issued on: 08/10/1993
Inventor: Shimada, et al.

Inventor

Application

No. 081592 filed on 06/23/1993

US Classes:

257/254, Physical deformation (e.g., strain sensor, acoustic wave detector)257/410, Gate insulator includes material (including air or vacuum) other than SiO 2257/467, Temperature257/750, Layered257/E29.162, Insulating materials for IGFET (EPO)257/E29.255, With field effect produced by insulated gate (EPO)257/E29.262, Vertical transistor (EPO)337/16, Bimetallic means337/36, With bimetallic elements (i.e., motion takes place in a plane at right angles to its major axis)337/89, Snap-action337/298THERMALLY ACTUATED SWITCHES

Examiners

Primary: Mintel, William
Assistant: Brown, Peter R.

Attorney, Agent or Firm

Foreign Patent References

  • 3112555 DE 10/23/1982
  • 0020362 JP 01/23/1986

International Classes

H01H 037/54
H01H 037/12
H01L 029/43
H01L 029/772

Abstract

A monolithic micromachined temperature switch obviates the necessity of assembling discrete components and also allows the temperature switch to be disposed in a relatively small package. In one embodiment of the invention, the temperature switch includes a bimetallic element operatively coupled to a pair of electrical contacts. In order to minimize contact wear due to contact arcing, a biasing force such as an electrostatic force is applied to the switch which provides snap action of the electrical contacts in both the opening and closing directions which enables the temperature set point to be adjusted by varying electrostatic force biasing voltage. In an alternate embodiment of the invention, the biasing force for providing the snap action effect can be eliminated by substituting the movable contacts with a field effect transistor with a movably mounted gate terminal. With such an arrangement since little or no current would normally flow through the gate terminal, the need to reduce contact arcing normally resulting from contact bounce would thus be eliminated. Thus, in such an embodiment, a biasing force such as an electrostatic biasing force is not necessary unless a snap action with hysteresis is desired. In alternate embodiments of the invention, the temperature switch may be formed with an integral power transistor for switching relatively large currents. The temperature switch may also be provided with an integrally formed capacitor for reducing the effects of switching inductive loads, such as relays and the like.

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