Patent References 2891124 2967269 3146378 3553540 3896309 Electro-thermal isolating switch Infrared imaging array employing metal tabs as connecting means Thermally-actuated microminiature valve Thermal protector Patent #: 5235308 InventorApplicationNo. 081592 filed on 06/23/1993US Classes:257/254, Physical deformation (e.g., strain sensor, acoustic wave detector)257/410, Gate insulator includes material (including air or vacuum) other than SiO 2257/467, Temperature257/750, Layered257/E29.162, Insulating materials for IGFET (EPO)257/E29.255, With field effect produced by insulated gate (EPO)257/E29.262, Vertical transistor (EPO)337/16, Bimetallic means337/36, With bimetallic elements (i.e., motion takes place in a plane at right angles to its major axis)337/89, Snap-action337/298THERMALLY ACTUATED SWITCHESExaminersPrimary: Mintel, WilliamAssistant: Brown, Peter R. Attorney, Agent or FirmForeign Patent References
International ClassesH01H 037/54H01H 037/12 H01L 029/43 H01L 029/772 AbstractA monolithic micromachined temperature switch obviates the necessity of assembling discrete components and also allows the temperature switch to be disposed in a relatively small package. In one embodiment of the invention, the temperature switch includes a bimetallic element operatively coupled to a pair of electrical contacts. In order to minimize contact wear due to contact arcing, a biasing force such as an electrostatic force is applied to the switch which provides snap action of the electrical contacts in both the opening and closing directions which enables the temperature set point to be adjusted by varying electrostatic force biasing voltage. In an alternate embodiment of the invention, the biasing force for providing the snap action effect can be eliminated by substituting the movable contacts with a field effect transistor with a movably mounted gate terminal. With such an arrangement since little or no current would normally flow through the gate terminal, the need to reduce contact arcing normally resulting from contact bounce would thus be eliminated. Thus, in such an embodiment, a biasing force such as an electrostatic biasing force is not necessary unless a snap action with hysteresis is desired. In alternate embodiments of the invention, the temperature switch may be formed with an integral power transistor for switching relatively large currents. The temperature switch may also be provided with an integrally formed capacitor for reducing the effects of switching inductive loads, such as relays and the like.Field of SearchBimetallic meansWith bimetallic elements (i.e., motion takes place in a plane at right angles to its major axis) Snap-action THERMALLY ACTUATED SWITCHES Plural diverse actuating means in single switch Responsive to plural external conditions (e.g., temperature and humidity) COMBINED WITH ELECTRICAL CONTACT OR LEAD Layered Temperature Gate insulator includes material (including air or vacuum) other than SiO 2 Insulated gate field effect transistor in integrated circuit Combined with passive components (e.g., resistors) Responsive to non-optical, non-electrical signal Physical deformation (e.g., strain sensor, acoustic wave detector) With means to reduce temperature sensitivity (e.g., reduction of temperature sensitivity of junction breakdown voltage by using a compensating element) | |