CMOS image sensor with pixel level A/D conversion
Patent 5461425 Issued on October 24, 1995. Estimated Expiration Date: 
February 15, 2014. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
February 15, 2014. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesSolid-state image pickup device having shared output line for photoelectric conversion voltage Photoelectric converting device having a plurality of monitoring means for detecting point of focus with high precision for focusing area lying over a plurality of blocks Patent #: 5329109 InventorsApplicationNo. 196686 filed on 02/15/1994US Classes:348/294, Solid-state image sensor250/208.1, Plural photosensitive image detecting element arrays348/297, Accumulation or integration time responsive to light or signal intensity348/311Charge-coupled architectureExaminersPrimary: Groody, James J.Assistant: Burgess, Glenton B. Attorney, Agent or FirmForeign Patent References
International ClassesH04N 003/14H04N 005/335 AbstractAn image sensor formed using a CMOS process is described herein which includes a pixel array core of phototransistors whose conductivities are related to the magnitude of light impinging upon the phototransistors. The analog signals generated by the phototransistors are converted to a serial bit stream by an A/D converter connected at the output of each phototransistor and formed in the immediate area of each phototransistor within the array core. Thus, a separate digital stream for each pixel element is output from the array core, and parasitic effects and distortion are minimized. In one embodiment, a filter circuit is connected to an output of the array core for converting the individual digital streams from each pixel element to multi-bit values corresponding to the intensity of light impinging on the phototransistor.Other References
Field of SearchUsing distinct luminance image sensorSolid-state image sensor With charge transfer type selecting register Charge-coupled architecture With timing pulse generator Accumulation or integration time responsive to light or signal intensity In charge coupled type image sensor Imaging array Photodiodes accessed by FETs Plural photosensitive image detecting element arrays | |
