Patent ReferencesSemiconductor module for a high-speed switching arrangement Bridge arm with transistors and recovery diodes Semiconductor arrangement having at least one semiconductor body Insulated gate bipolar transistor power module Inverter switch with parallel free-wheel diodes Semiconductor device Snubber circuit for power conversion semiconductor elements and assembly thereof Modular circuit board Method of controlling an inverter Low-inductance package for multiple paralleled devices operating at high frequency Inventors
AssigneeApplicationNo. 947544 filed on 09/21/1992US Classes:363/132, Bridge type257/E25.012, Devices being arranged next to each other (EPO)257/E25.016, Devices being arranged next to each other (EPO)257/E25.029, Devices being of two or more types, e.g., forming hybrid circuits (EPO)363/43By step-wave, amplitude summation techniqueExaminersPrimary: Sterrett, JeffreyAttorney, Agent or FirmForeign Patent References
International ClassH02M 007/538.7Foreign Application Priority Data1991-09-20 JPAbstractAn inverter device includes plural modules, each module being formed by a series circuit having a parallel circuit of a first switching device and a first diode, and a parallel circuit of a second switching device and a second diode, allowing a reduced size, high reliability, high frequency switching and low noise. Each module forms one arm portion of the inverter. Lifetimes of the diodes and the switching devices are set in a manner to equalize losses in the inverter. Preferably, insulated gate bipolar transistors (IGBTs) formed by diffusion are used as the switching devices since the lifetimes of these devices can easily be adjusted to optimize design of the inverter.Other References
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