Programmable multizone gas injector for single-wafer semiconductor processing equipment
Patent 5453124 Issued on September 26, 1995. Estimated Expiration Date: 
June 17, 2014. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
June 17, 2014. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3854443 Gas control system for chemical vapor deposition system Metal organic chemical vapor deposition method with controlled gas flow rate Chemical vapor deposition reactor and method of operation Semi-insulating cobalt doped indium phosphide grown by MOCVD Processing apparatus and method for plasma processing Patent #: 5134965 InventorsAssigneeApplicationNo. 261650 filed on 06/17/1994US Classes:118/715, GAS OR VAPOR DEPOSITION118/725Substrate heaterExaminersPrimary: Bueker, RichardAttorney, Agent or FirmForeign Patent References
International ClassC23C 016/00AbstractA programmable multizone fluids injector for use in single-wafer semiconductor processing equipment including an injector having a plurality of orifices therein which are divided into a number of separate zones or areas. These zones or areas are connected by means of appropriate passageways and conduits to a source of process fluids. Each of the separate conduits has at least one flow control device located therein for independently controlling the amounts and ratios of process fluids flowing into each zone. The fluid control devices are responsive to input signals so that the fluid flow rates from the orifices can maintain a desired flow pattern within the process chamber to suit the individual needs of a particular fabrication processs. | |
