Method of producing semiconductor device Patent #: 4910169
ApplicationNo. 222759 filed on 04/01/1994
US Classes:438/644, Having adhesion promoting layer257/E21.591, Modifying pattern or conductivity of conductive members, e.g., formation of alloys, reduction of contact resistances (EPO)438/651, Silicide438/672, Plug formation (i.e., in viahole)438/680, Utilizing chemical vapor deposition (i.e., CVD)438/687Copper of copper alloy conductor
ExaminersPrimary: Chaudhuri, Olik
Assistant: Everhart, C.
Attorney, Agent or Firm
Foreign Patent References
International ClassesH01L 021/44
AbstractA silicon nitride layer (34) has improved adhesion to underlying copper interconnect members (30) through the incorporation of an intervening copper silicide layer (32). Layer (32) is formed in-situ with a plasma enhanced chemical vapor deposition (PECVD) process for depositing silicon nitride layer (34). To form layer (32), a semiconductor substrate (12) is provided having a desired copper pattern formed thereon. The copper pattern may include copper interconnects, copper plugs, or other copper members. The substrate is placed into a PECVD reaction chamber. Silane is introduced into the reaction chamber in the absence of a plasma to form a copper silicide layer on any exposed copper surfaces. After a silicide layer of a sufficient thickness (for example, 10 to 100 angstroms) is formed, PECVD silicon nitride is deposited. The copper silicide layer improves adhesion, such that silicon nitride layer is less prone to peeling away from underlying copper members.