SOI (silicon on insulator) substrate with enhanced gettering effects
Patent 5443661 Issued on August 22, 1995. Estimated Expiration Date: 
July 27, 2014. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
July 27, 2014. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod of producing a substrate having semiconductor-on-insulator structure with gettering sites Method for making intrinsic gettering sites in bonded substrates SOI type vertical channel field effect transistor and process of manufacturing the same Semiconductor substrate having a gettering layer Patent #: 5327007 InventorsAssigneeApplicationNo. 280994 filed on 07/27/1994US Classes:148/33.5, Having at least three contiguous layers of semiconductive material148/33.3, With non-semiconductive coating thereon257/E21.32, Of silicon on insulator (SOI) (EPO)438/402, And gettering of substrate438/406, Bonding of plural semiconductive substrates438/476By layers which are coated, contacted, or diffusedExaminersPrimary: Hearn, Brian E.Assistant: Dang, Trung Attorney, Agent or FirmForeign Patent References
International ClassH01L 021/20Foreign Application Priority Data1993-07-27 JPAbstractA silicon-on-insulator (SOI) substrate is arranged such that a polycrystalline silicon film which functions as a gettering site for heavy metals is provided on a first single crystal silicon substrate, a silicon oxide island film is partially provided in a polycrystalline silicon film, and a second single crystal silicon substrate is provided on an entire upper surface of the polycrystalline silicon film. An element isolation trench extends from an upper surface of the second single crystal silicon substrate to an upper surface of the first single crystal silicon substrate, and a silicon oxide film is buried in the element isolation trench. The SOI substrate thus constituted has a high gettering effect for heavy metals. | |
