Multi-zone real-time emissivity correction system
December 16, 2013. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesEmissivity correction apparatus and method Method and apparatus for real-time wafer temperature measurement using infrared pyrometry in advanced lamp-heated rapid thermal processors Pyrometer apparatus and method Bichannel radiation detection method Multi-point pyrometry with real-time surface emissivity compensation Pyrometer apparatus and method Apparatus and method for determining wafer temperature using pyrometry Pyrometer apparatus for use in rapid thermal processing of semiconductor wafers Patent #: 5308161 InventorsAssigneeApplicationNo. 168450 filed on 12/16/1993US Classes:374/126, Having emissivity compensating or specified radiating surface374/9, EMISSIVITY DETERMINATION374/128Having significant signal handling circuitry (e.g., linearizing, emissivity compensation)ExaminersPrimary: Gutierrez, DiegoAttorney, Agent or FirmForeign Patent References
International ClassesG01J 005/02G01J 005/52 G01N 025/00 AbstractA multi-zone emissivity correction system and method that may be used in a multi-zone illuminator of a RTP-AVP system. The multi-zone illuminator comprises a plurality of lamps arranged in zones. A dummy lamp is also provided for each zone. A first plurality of sensors monitor the wafer and a second plurality of sensors monitor dummy lamp radiance. For each zone, an emissivity factor is determined based on the first and second pluralities of sensors. An effective black body radiance is also determined for each zone based on a wafer radiance factor for each zone and the emissivity factors. | |
