Semiconductor device having active device cells and a monitor cell
May 13, 2014. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3352915 Power transistor including a sense emitter and a reference emitter for enabling power dissipation to be limited to less than a destructive level Current sensing circuit Power semiconductor device with main current section and emulation current section MOSFET device Power MOSFET having a current sensing element of high accuracy High power transistor with voltage, current, power, resistance, and temperature sensing capability Semiconductor device with current detecting function MOS-pilot structure for an insulated gate transistor MOSFET having drain voltage detection function InventorApplicationNo. 242687 filed on 05/13/1994US Classes:257/355, With overvoltage protective means257/139, With extended latchup current level (e.g., COMFET device)257/341, Plural sections connected in parallel (e.g., power MOSFET)257/401, With specified physical layout (e.g., ring gate, source/drain regions shared between plural FETs, plural sections connected in parallel to form power MOSFET)257/E29.259With nonplanar surface (EPO)ExaminersPrimary: Limanek, Robert P.Assistant: Hardy, David B. Attorney, Agent or FirmInternational ClassH01L 029/78Foreign Application Priority Data1992-04-09 GBAbstractA semiconductor body (2) has a first region (3) providing a current path to a first main electrode (4) and carrying a plurality of active device cells (5). The majority (5a) of the active device cells are connected to a second main electrode (6) for providing a main current path through the device between the first and second main electrodes (4 and 6). At least one remaining active device cell forms a monitor cell (5b) and is connected to a monitor electrode (7) for providing a monitor current path through the device between the first main electrode (4) and the monitor electrode (7). The one monitor cell (5b) is formed differently from the majority (5a) of the active device cells so as to be more susceptible to failure than the majority of the active device cells so providing an early warning of the imminent failure of the device enabling evasive action to be taken to inhibit failure of the entire device.Field of SearchWith extended latchup current level (e.g., COMFET device)Combined with other solid-state active device in integrated structure Plural sections connected in parallel (e.g., power MOSFET) With specified physical layout (e.g., ring gate, source/drain regions shared between plural FETs, plural sections connected in parallel to form power MOSFET) Guard ring or groove With lightly doped portion of drain region adjacent channel (e.g., LDD structure) With resistive region connecting separate sections of device With overvoltage protective means TEST OR CALIBRATION STRUCTURE | |
