Surface emitting photonic switching structure
Patent 5424559 Issued on June 13, 1995. Estimated Expiration Date: 
June 6, 2014. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
June 6, 2014. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesLight emitting semiconductor device Electrically pumped vertical cavity laser Optical semiconductor device Wavelength-tunable distributed Bragg reflector semiconductor laser Integration of transistors with vertical cavity surface emitting lasers Patent #: 5283447 InventorAssigneeApplicationNo. 254274 filed on 06/06/1994US Classes:257/21, Light responsive structure257/22, With specified semiconductor materials257/85, With heterojunction257/98, With reflector, opaque mask, or optical element (e.g., lens, optical fiber, index of refraction matching layer, luminescent material layer, filter) integral with device or device enclosure or package257/184, Light responsive structure359/248SemiconductorExaminersPrimary: Mintel, WilliamAttorney, Agent or FirmForeign Patent References
International ClassH01L 027/14Foreign Application Priority Data1993-06-11 JPAbstractA surface emitting photonic switching structure includes an intermediate semiconductor structure having pn junction is sandwiched between a first semiconductor multi-layer film mirror (DBR1) and a second semiconductor multi-layer film mirror (DBR2). A pair of electrodes are provided to the intermediate semiconductor structure and the pn junction therein is applied with reverse bias voltages for changing the effective optical length of the intermediate semiconductor structure so as to change transmission wavelength of light incident on the second multi-layer film mirror or the first multi-layer film mirror. The structure can be two-dimensionally integrated, be compact and is capable of operating with low voltages.Other References
Field of SearchLight responsive structureWith particular barrier dimension Strained layer superlattice With specified semiconductor materials Light responsive structure With heterojunction With reflector, opaque mask, or optical element (e.g., lens, optical fiber, index of refraction matching layer, luminescent material layer, filter) integral with device or device enclosure or package Combined in integrated structure More than two heterojunctions in same device Plural heterojunctions in same device Semiconductor Using reflective or cavity structure | |
