Process for RF sputtering of cadmium telluride photovoltaic cell
May 10, 2013. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesPhotovoltaic cells Cadmium sulfide film Method of making a photovoltaic cell Photovoltaic cell R.F. Sputtering apparatus including multi-network power supply Process for thin film deposition of cadmium sulfide Thin film heterojunction photovoltaic cells and methods of making the same Reactive deposition method and apparatus Radiant energy converter having sputtered CdSiAs2 absorber Photo-voltaic power generating means and methods InventorAssigneeApplicationNo. 059559 filed on 05/10/1993US Classes:438/95, Chalcogen (i.e., oxygen (O), sulfur (S), selenium (Se), tellurium (Te)) containing136/260, Cadmium containing136/264, Selenium or tellurium containing136/265, Copper, lead, or zinc containing204/192.25, Semiconductor204/192.26, Optical or photoactive438/94HeterojunctionExaminersPrimary: Weisstuch, AaronAttorney, Agent or FirmInternational ClassesH01L 031/18H01L 031/072 H01L 031/075 C23C 014/35 AbstractA thin film photovoltaic cell having a semiconductor layer of cadmium sulfide and a semiconductor layer of cadmium telluride is manufactured in a process in which the cadmium sulfide and the cadmium telluride are deposited onto a conductive layer of a substrate by RF sputtering. A layer of cadmium sulfide is deposited on the conducting layer of the substrate by RF magnetron sputtering. After the cadmium sulfide is deposited, a layer of cadmium telluride is deposited by RF magnetron sputtering. The RF sputtering deposition of the two semiconductor layers increases the efficiency of the cell and is conducive to a large scale manufacturing process. The photovoltaic cell may include only two semiconductor layers forming a p-n junction. A third semiconductor layer, typically zinc telluride, may be added to the cell to form a p-i-n junction. The efficiency of the cell is further increased by treatment with cadmium chloride and annealing in dry air. The cadmium chloride is deposited using laser-driven physical vapor deposition. The cell is then annealed at approximately 400 degrees Celsius in air prior to deposition of the second contact. The second contact is deposited using vacuum evaporation of copper and gold.Other References
Field of SearchSemiconductorOptical or photoactive II-VI compound Light responsive structure Between different group IV-VI or II-VI or III-V compounds other than GaAs/GaAlAs PIN detector, including combinations with non-light responsive active devices Light responsive pn junction Group II-VI compound (e.g., CdTe, Hg x Cd 1-x Te) With high resistivity (e.g., "intrinsic") layer between P and N layers (e.g., PIN diode) |
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