Electron beam driven negative ion source
Patent 5391962 Issued on February 21, 1995. Estimated Expiration Date: 
July 13, 2012. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
July 13, 2012. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3702973 Three chamber negative ion source Patent #: 4559477 InventorsAssigneeApplicationNo. 912477 filed on 07/13/1992US Classes:313/362.1, Supplying ionizable material (e.g., gas or vapor)250/427, Electron bombardment type315/111.81Electron or ion sourceExaminersPrimary: O'Shea, SandraAttorney, Agent or FirmInternational ClassesH01J 027/02H05H 001/24 AbstractA negative ion source is disclosed wherein an electron beam produced in one chamber is used to sustain a discharge in another chamber whose conditions are independently adjusted for optimum production of vibrationally excited hydrogen molecules. By including a provision for an independently controlled source of low energy electrons in a region near the extraction aperture, the optimum conditions for creation of H- ions by dissociative attachment are produced. In this manner the current and brightness of a H- beam may be maximized.Other References
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