Memory material and method for its manufacture

Patent 5390142 Issued on February 14, 1995. Estimated Expiration Date:

May 26, 2012. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Abstract Claims Description Full Text

Patent References

Information recording member and method of fabricating the same
Patent #: 4434429
Issued on: 02/28/1984
Inventor: Terao , et al.

Information recording member
Patent #: 4637976
Issued on: 01/20/1987
Inventor: Terao , et al.

Information recording member
Patent #: 4769311
Issued on: 09/06/1988
Inventor: Terao , et al.

Optical recording medium and method of optical recording and erasing using medium
Patent #: 4916048
Issued on: 04/10/1990
Inventor: Yamada, et al.

Optical recording medium
Patent #: 4935336
Issued on: 06/19/1990
Inventor: Yamada, et al.

Magnetic recording medium
Patent #: 4950555
Issued on: 08/21/1990
Inventor: Michimori, et al.

Information recording thin film and method for recording information
Patent #: 4954379
Issued on: 09/04/1990
Inventor: Nishida, et al.

Interdispersed two-phase ferrite composite and electrographic magnetic carrier particles therefrom Patent #: 5106714
Issued on: 04/21/1992
Inventor: Saha, et al.

Inventor

Gendlin, Shimon

Assignee

Kappa Numerics, Inc.

Application

No. 889025 filed on 05/26/1992

US Classes:

365/145, Ferroelectric257/E21.008, Of capacitor (EPO)346/135.1, Laminated, impregnated, or coated bases365/65, Ferroelectric365/157, Magnetostrictive or piezoelectric369/284, Radiation beam modified or controlling (e.g., photosensitve, optical track)369/286, Laminated or unified discrete layers428/900, MAGNETIC FEATURE430/19ERASABLE IMAGING

Examiners

Primary: Nguyen, Viet Q.

Attorney, Agent or Firm

Pennie & Edmonds

International Classes

H01L 043/08
G03C 001/72

Abstract

A composition of materials having ferromagnetic, piezoelectric, and electro-optical properties is disclosed. In the preferred embodiment, the composition of materials comprises a first layer of Pb.sub.(1-x-y) Cdx Siy, a second layer of Se.sub.(1-z) Sz, and a third layer of Fe.sub.(1-w) Crw, where x, y, z and w are values within the ranges of 0.09ࣘxࣘ0.11, 0.09ࣘyࣘ0.11, 0.09ࣘxࣘ0.11 and 0.18ࣘwࣘ0.30. Additionally, each of the layers contain at least one of the elements of Ag, Bi, O, and N. A random-accessible, non-volatile memory built using the invented composition of materials is also disclosed. This memory provides for storing two independent bits of binary information in a single memory cell. Each cell comprises two orthogonal address lines formed on the opposite surface of a Si substrate, a composition of materials of the present invention formed over each of the address lines, and an electrode formed over each composition of materials. The data is stored electromagnetically and retrieved as a piezoelectric voltage.

Other References

J. Raffel, "Operating Characteristics of a Thin Film Memory", Journal of Applied Physics, vol. 30, No. 4, Apr. 1959, pp. 60S-61S
J. I. Raffel et al., "Magnetic Memory Design", Proceedings of the IRE, Jan. 1961, pp. 155-164
E. M. Bradley, "Properties of Magnetic Films of Memory Systems", Journal of Applied Physics, vol. 33, No. 3, Mar. 1962, pp. 1051-1057
A. H. Bobeck et al., "Some Properties of an Anisotropic Thin-Film-Waffle-Iron Memory Cell", Journal of Applied Physics, vol. 37, No. 3, Mar. 1966, pp. 1357-1358
Hsu Chang, "Coupled-Film Memory Elements", Journal of Applied Physics, vol. 38, No. 3, Mar. 1967, pp. 1203-1204
Richard Jones et al., "The B8500-Microsecond Thin-Film Memory", Fall Joint Computer Conference, 1967, pp. 347-352
Arthur Pohm et al. "Magnetic Film Memory Systems", IEEE Transactions on Magnetics, vol. Mag-4, No. 2, Jun. 1968, pp. 146-152
Geoffrey Bate et al., "A Critical Review of Magnetic Recording Materials", IEEE Transactions on Magnetics, vol. Mag-5, No. 4, Dec. 1969, pp. 821-83