Method and apparatus for moving a material removal tool with low tool accelerations
Patent 5375064 Issued on December 20, 1994. Estimated Expiration Date: 
December 2, 2013. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
December 2, 2013. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod and apparatus for ion etching and deposition Method and apparatus for ion deposition and etching Methods and apparatus for generating a plasma for "downstream" rapid shaping of surfaces of substrates and films Method to determine tool paths for thinning and correcting errors in thickness profiles of films Patent #: 5291415 InventorApplicationNo. 162510 filed on 12/02/1993US Classes:700/188, Including velocity or acceleration control156/345.24, With measuring, sensing, detection or process control means204/298.32, Measuring, analyzing or testing216/52, MECHANICALLY SHAPING, DEFORMING, OR ABRADING OF SUBSTRATE216/59, With measuring, testing, or inspecting219/121.4, Etching219/121.41MethodsExaminersPrimary: Ruggiero, JosephAttorney, Agent or FirmInternational ClassG06F 015/46AbstractA stage 14 supporting a material removal tool 12 is instructed by a controller 16 through interface 18 to accelerate and decelerate the material removal tool 12 within at least one predetermined spatial interval while satisfying the dwell-time required to remove a predetermined amount of material to achieve a desired thickness of the spatial interval.Field of SearchCoating, forming or etching by sputteringMeasuring or testing (e.g., of operating parameters, property of article, etc.) Sputter etching Silicon containing Measuring or testing (e.g., of operating parameters, end point determination, etc.) Measuring, analyzing or testing Using plasma Etching Methods Control systems Rate control With "feed-rate" control |
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