Thin film single crystal substrate
Patent 5373171 Issued on December 13, 1994. Estimated Expiration Date: 
December 13, 2011. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
December 13, 2011. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesProcess for forming monocrystalline silicon carbide on silicon substrates Hetero junction semiconductor device Process for improving the quality of epitaxial silicon films grown on insulating substrates utilizing oxygen ion conductor substrates Silicon-on-sapphire integrated circuit and method of making the same Process for producing a SiC semiconductor device Patent #: 4762806 InventorsAssigneeApplicationNo. 165734 filed on 03/09/1988US Classes:257/77, Diamond or silicon carbide148/33.4, With contiguous layers of different semiconductive material257/78, II-VI compound257/258, In imaging array257/E21.119, Characterized by the substrate (EPO)257/E21.461, Deposition of semiconductor material on substrate, e.g., epitaxial growth (EPO)438/105, HAVING DIAMOND SEMICONDUCTOR COMPONENT438/931SILICON CARBIDE SEMICONDUCTORExaminersPrimary: James, Andrew J.Attorney, Agent or FirmInternational ClassH01L 027/10Foreign Application Priority Data1987-03-12 JPAbstractA thin film single crystal substrate useful in the production of a semiconductor, comprising a base substrate made of single crystal diamond and at least one thin film of a single crystal of a material selected from the group consisting of silicon carbide, silicon, boron nitride, gallium nitride, indium nitride, aluminum nitride, boron phosphide, cadmium selenide, germanium, gallium arsenide, gallium phosphide, indium phosphide, gallium antimonide, indium arsenide, indium antimonide, aluminum phosphide, aluminum arsenide, aluminum antimonide, cadmium telluride, mercury sulfide, zinc oxide, zinc sulfide, zinc selenide and zinc telluride, and optionally an intermediate layer between the base substrate and the thin film of single crystal, which optionally comprises an intermediate layer between the base substrate and the thin film of single crystal. | |
