Chemical vapor deposition apparatus
Wafer processing chuck using slanted clamping pins
Magnetic field-enhanced plasma etch reactor
Process for PECVD of silicon oxide using TEOS decomposition
AbstractThe apparatus and method of the present invention provide even and repeatable heat transfer to and from essentially the entire substrate used in semiconductor processing. In particular, the support platform upon which the substrate sets during processing is designed to permit heat transfer to the very edge of the substrate so that substrate space unavailable for processing is minimized. The support platform comprises a substrate-facing surface 211 including at least one fluid supply source 214; a continuous, platform-based fluid flow barrier 212; and at least one opening 234 through substrate-facing surface 211 through which a substrate lift finger 221 can be operated. Fluid flow barrier 212 contacts the back side (non-processed side) of the substrate at a location very near the exterior edge of the substrate. To prevent heat transfer fluid from flowing downward through the lift finger openings 234, a lift finger sealing cover 222 is employed. Sealing cover 222 is preferably self-aligning, to ensure formation of a continuous lift finger fluid flow barrier 228 surrounding lift finger opening 234.