Strained quantum well type semiconductor laser device
Patent 5363392 Issued on November 8, 1994. Estimated Expiration Date: 
November 18, 2012. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
November 18, 2012. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesInP-based quantum-well laser 5117469 Optical semiconductor device Semiconductor wavelength conversion device Quantum barrier semiconductor optical device Quantum-well diode laser Patent #: 5251225 InventorsAssigneeApplicationNo. 978234 filed on 11/18/1992ExaminersPrimary: Lee, John D.Attorney, Agent or FirmInternational ClassH01S 003/19Foreign Application Priority Data1991-11-18 JPAbstractA strained quantum well type semiconductor laser device is disclosed to comprise a plurality of layers including a quantum well active layer formed on a semiconductor substrate characterized in that tensile strained quantum well layers and compression strained barrier layers are stacked alternately to form said quantum well active layer and the quantum well layers are made of either InGaAs or InGaAsP and InP, when the semiconductor substrate is made of InP, InGaP or GaAs, respectively. | |
