InP-based quantum-well laser
Optical semiconductor device
Semiconductor wavelength conversion device
Quantum barrier semiconductor optical device
Quantum-well diode laser Patent #: 5251225
AbstractA strained quantum well type semiconductor laser device is disclosed to comprise a plurality of layers including a quantum well active layer formed on a semiconductor substrate characterized in that tensile strained quantum well layers and compression strained barrier layers are stacked alternately to form said quantum well active layer and the quantum well layers are made of either InGaAs or InGaAsP and InP, when the semiconductor substrate is made of InP, InGaP or GaAs, respectively.