Method of producing single crystal and apparatus therefor
Patent 5357898 Issued on October 25, 1994. Estimated Expiration Date: 
October 20, 2012. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
October 20, 2012. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 2842467 3058915 Lithium tantalate single crystal growth from a platinum-rhodium crucible in an inert gas, nitrogen or reducing gas atmosphere Method for producing a lithium tantalate single crystal Method of epitaxial growth employing electromigration Electromigration process for the purification of molten silicon during crystal growth Crystal growing apparatus Patent #: 4512954 InventorsAssigneeApplicationNo. 963769 filed on 10/20/1992US Classes:117/3PROCESSES OF GROWTH WITH A SUBSEQUENT STEP OF HEAT TREATING OR DELIBERATE CONTROLLED COOLING OF THE SINGLE-CRYSTALExaminersPrimary: Breneman, R. BruceAssistant: Garrett, Felisa Attorney, Agent or FirmForeign Patent References
International ClassC30B 015/20Foreign Application Priority Data1991-10-22 JPAbstractIn growing an oxide single crystal such as a garnet single crystal or ferrite single crystal by the liquid epitaxial process, the Bridgman process or the like, the melting-out of a platinum or platinum-based alloy-made crucible holding a melt for growing the crystal therefrom is prevented by bringing an electrode in contact with the melt or dipping the electrode into the melt in oxygen, air or an inert gas, applying electric current through the melt between the electrode and the metallic container and controlling the current so as to keep it at nearly zero.Other References
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