U.S. patents available from 1976 to present.
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Process for etching mixed metal oxides

Patent 5356516 Issued on October 18, 1994. Estimated Expiration Date: Icon_subject February 26, 2013. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

3887403

Method for patterning PLZT thin films
Patent #: 4759823
Issued on: 07/26/1988
Inventor: Asselanis ,   et al.

Wet chemical etchant and method for etching high temperature superconductive films
Patent #: 4997522
Issued on: 03/05/1991
Inventor: Shokoohi

Process for multilayer printed circuit board manufacture Patent #: 5106454
Issued on: 04/21/1992
Inventor: Allardyce, et al.

Inventors

Assignee

Application

No. 023286 filed on 02/26/1993

US Classes:

216/101Etching of a compound containing at least one oxygen atom and at least one metal atom

Examiners

Primary: Breneman, R. Bruce
Assistant: Chang, Jon

Attorney, Agent or Firm

International Class

C23F 001/00

Abstract

An etching process using dicarboxylic and tricarboxylic acids as chelating etchants for mixed metal oxide films such as high temperature superconductors and ferroelectric materials. Undesirable differential etching rates between different metal oxides are avoided by selection of the proper acid or combination of acids. Feature sizes below one micron, excellent quality vertical edges, and film thicknesses in the 100 Angstom range may be achieved by this method.

Other References

  • Shokoohi, Schiavone, Rogers, Inam, Wu, Nazar and Venkatesan, "Wet Chemical etching of high Tc superconductors by EDTA" pp. 1299-1302
  • Mat. Res. Soc. Symp. Proc. vol. 169 1990 Materials Research Society "Improved Aqueous Etchant for High Tc Superconductor Materials", Ashby et al. Appl. Phys. Lett. 60(17), 27 Apr. 1992 2147-2149
  • "Machining of PZT, PT and (Mn,Zn)Fe2 O4 Ceramics by Laser--Induced Chemical Etching" Tadashi Shiosaki, Japanese Journal of Applied Physics, vol. 26 (1987) Supplement 26-2, pp. 159-16
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