Control of time-dependent haze in the manufacture of integrated circuits
Patent 5352328 Issued on October 4, 1994. Estimated Expiration Date: 
December 15, 2012. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
December 15, 2012. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.InventorsAssigneeApplicationNo. 991064 filed on 12/15/1992US Classes:438/691, Combined mechanical and chemical material removal134/902, SEMICONDUCTOR WAFER216/79, Etching silicon containing substrate216/89, Etchant contains solid particle (e.g., abrasive for polishing, etc.)216/99, Substrate contains silicon or silicon compound257/E21.228, Wet cleaning only (EPO)438/750, To same side of substrate438/906CLEANING OF WAFER AS INTERIM STEPExaminersPrimary: Breneman, R. BruceAssistant: Everhart, B. Attorney, Agent or FirmInternational ClassesH01L 021/00H01L 021/02 B44C 001/22 C03C 015/00 AbstractThe onset of haze on silicon wafers is controlled by treating the wafers with a chemical selected from the group consisting of hot water and isopropyl alcohol and then storing the treated wafers in an inert atmosphere such as nitrogen or argon.Other References
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