High-resolution lithography and semiconductor device manufacturing method
January 26, 2013. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3779778 Image forming material Method of manufacturing embossed articles of preset configuration Pattern-forming process Method of catalytic etching Laser-driven fusion etching process Non-photographic method for patterning organic polymer films Method of making a metallic pattern on a substrate Method for diffusion patterning Patent #: 5209814 InventorsAssigneeApplicationNo. 009012 filed on 01/26/1993US Classes:216/13, FORMING OR TREATING ELECTRICAL CONDUCTOR ARTICLE (E.G., CIRCUIT, ETC.)216/47, Mask is multilayer resist257/E21.03, Electro-lithographic process (EPO)257/E21.031, X-ray lithographic process (EPO)257/E21.314, Using mask (EPO)430/313, With formation of resist image, and etching of substrate or material deposition430/323, Including etching substrate430/325Post image treatment to produce elevated patternExaminersPrimary: Dang, ThiAttorney, Agent or FirmInternational ClassH01L 021/00Foreign Application Priority Data1992-01-28 JPAbstractA lithographic method for forming a mask pattern is useful for etching wiring or insulator layers on a substrate. A catalyst generation layer and a latent image formation layer are formed on the target layer prior to application of actinic radiation to activate a catalyst in the catalyst generation layer in accordance with a predetermined pattern. The activated catalyst diffuses into the latent image formation layer to form a latent image, which then serves as a mask pattern for etching the catalyst generation layer, latent image formation layer and target layer. The catalyst generation layer may be formed prior to the latent image formation layer, or vice versa. In another embodiment, the catalyst generation layer is formed prior to the radiation step, but the latent image formation layer is formed after application of the actinic radiation.Other References
Field of SearchWith formation of resist image, and etching of substrate or material depositionEtching of substrate and material deposition Material deposition only Multiple etching of substrate Insulative or nonmetallic dielectric etched Metal etched Including etching substrate Post image treatment to produce elevated pattern |
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