Substrate having an active element array with low hydroxyl and chlorine
January 27, 2013. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3925583 Process for producing high-purity silica glass Method for manufacturing fused quartz glass Deep UV lamp bulb Method for producing a preform for light waveguides Method for producing articles of high-purity synthetic quartz glass Method of forming passivated polycrystalline semiconductors Process for purifying silica Thin film semiconductor device and method of manufacturing the same Semiconductor photo-electrically-sensitive device InventorsAssigneeApplicationNo. 009677 filed on 01/27/1993US Classes:349/158, Substrate349/42, Transistor501/54, More than 90 percent by weight silica501/900OPTICAL GLASS (E.G., SILENT ON REFRACTIVE INDEX AND/OR ABBE NUMBER)ExaminersPrimary: Sikes, William L.Assistant: Parker, Kenneth Attorney, Agent or FirmForeign Patent References
International ClassG02F 001/133.3Foreign Application Priority Data1992-01-31 JPAbstractA synthetic quartz glass substrate (1) supporting active elements is formed of high-purity synthetic quartz glass having, a hydroxyl group content of 200 ppm or below and chlorine group content of 50 ppm or below. The substrate (1) may have an impurity level of 1 ppm or less sodium and 1 ppm or less aluminum. TFTs (6), i.e., active elements, and picture element electrodes (7) are formed on the surface of the synthetic quartz glass substrate (1) to construct a driving panel for a liquid crystal display of an active matrix type. A liquid crystal panel is formed by disposing the driving panel and a counter substrate (2) opposite to each other and sandwiching a liquid crystal layer (3) between the driving panel and the counter substrate (2).Other References
Field of SearchGlass, ceramic, or sintered, fused, fired, or calcined metal oxide or metal carbide containing (e.g., porcelain, brick, cement, etc.)Silica Insulated electrode device is combined with diverse type device (e.g., complementary MOSFETs, FET with resistor, etc.) Substrate is single crystal insulator (e.g., sapphire or spinel) More than 90 percent by weight silica OPTICAL GLASS (E.G., SILENT ON REFRACTIVE INDEX AND/OR ABBE NUMBER) | |
