Resonant electron transfer device
Patent 5347140 Issued on September 13, 1994. Estimated Expiration Date: 
August 27, 2012. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
August 27, 2012. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesThree-terminal quantum device Patent #: 4912531 InventorsAssigneeApplicationNo. 935988 filed on 08/27/1992US Classes:257/17, With particular barrier dimension257/20, Field effect device257/25, Employing resonant tunneling257/E29.229With field effect produced by insulated gate (EPO)ExaminersPrimary: Limanek, Robert P.Attorney, Agent or FirmForeign Patent References
International ClassH01L 029/88Foreign Application Priority Data1991-08-27 JPAbstractA resonant electron transfer device includes a plurality of units each of which has of at least one one-dimensional quantum wire having a quantum well elongated in a direction, a zero-dimensional quantum dot having a base quantization level higher than that of the one-dimensional quantum wire an electrode for controlling respective internal levels of the quantum wire and dot wherein the quantum wire and dot forming one unit is connected via a potential barrier capable of exhibiting a tunnel effect therebetween.Field of SearchTHIN ACTIVE PHYSICAL LAYER WHICH IS (1) AN ACTIVE POTENTIAL WELL LAYER THIN ENOUGH TO ESTABLISH DISCRETE QUANTUM ENERGY LEVELS OR (2) AN ACTIVE BARRIER LAYER THIN ENOUGH TO PERMIT QUANTUM MECHANICAL TUNNELING OR (3) AN ACTIVE LAYER THIN ENOUGH TO PERMIT CARRIER TRANSMISSION WITH SUBSTANTIALLY NO SCATTERING (E.G., SUPERLATTICE QUANTUM WELL, OR BALLISTIC TRANSPORT DEVICE)Field effect device Non-heterojunction superlattice (e.g., doping superlattice or alternating metal and insulator layers) With particular barrier dimension Employing resonant tunneling Of specified configuration | |
