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US Patent 5337015 - In-situ endpoint detection method and apparatus for chemical-mechanical polishing using low amplitude input voltage
US Patent Issued on August 9, 1994
Estimated Patent Expiration Date:
June 14, 2013Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
Estimated Patent Expiration Date:
June 14, 2013Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.AbstractAn in-situ thickness monitoring/endpoint detection method and apparatus for chemical-mechanical polishing (CMP) of a dielectric layer on a top surface of a semiconductor wafer is disclosed. The apparatus comprises center and guard electrodes and associated electronic circuitry, including a high frequency, low voltage signal generating means, for converting a current which is inversely proportional to the dielectric layer thickness into a corresponding analog voltage. A position detection device triggers an analog-to-digital converter to convert the analog voltage into a digital signal while the wafer is located within a detection region as the wafer is being polished. A control means gathers the digital signals corresponding to the thickness data for processing and CMP device control. | InventorsApplicationNo. 075628 filed on 06/14/1993US Classes:324/671, To determine dimension (e.g., dielectric thickness)156/345.13, With measuring, sensing, detection or process control means324/688, Including a guard or ground electrode438/17Electrical characteristic sensedField of Search324/71.1, DETERMINING NONELECTRIC PROPERTIES BY MEASURING ELECTRIC PROPERTIES324/671, To determine dimension (e.g., dielectric thickness)324/679, With comparison or difference circuit324/687, Having fringing field coupling324/688, Including a guard or ground electrode324/690Including a probe type structureExaminersPrimary: Wieder, Kenneth A.Assistant: Tobin, Christopher M. Attorney, Agent or FirmUS Patent References2285152, 3826979, 4087672, Laser removal of material from workpiecesIssued on: 05/02/1978 Inventor: Yi4266187, Method and apparatus for measuring effectiveness of a corrosion inhibitor Issued on: 05/05/1981 Inventor: Slough4407094, Apparatus for automatic lapping control Issued on: 10/04/1983 Inventor: Bennett , et al.4476430, Non-contact sensor for determining moving flat steel strip shape profile Issued on: 10/09/1984 Inventor: Wright , et al.4652830, Analyzer for comparative measurements of bulk conductivity Issued on: 03/24/1987 Inventor: Brown4751466, Instrument for on-line measurement of the absolute electrical conductivity of a liquid Issued on: 06/14/1988 Inventor: Colvin , et al.4793895, In situ conductivity monitoring technique for chemical/mechanical planarization endpoint detection Issued on: 12/27/1988 Inventor: Kaanta , et al.4845421, Method and apparatus for measuring the moisture content of a substance Issued on: 07/04/1989 Inventor: Howarth , et al.5025220, Continuous measurement of the absolute conductivity of a liquid Issued on: 06/18/1991 Inventor: Colvin, et al.5030918, Portable gauge for measuring thickness variations of thin plastic film Issued on: 07/09/1991 Inventor: Thon5081421, In situ monitoring technique and apparatus for chemical/mechanical planarization endpoint detection Issued on: 01/14/1992 Inventor: Miller, et al.5136817Automatic lapping apparatus for piezoelectric materials Issued on: 08/11/1992 Inventor: Tabata, et al. International ClassG01R 027/26 |
