Semiconductor optical device with nanowhiskers
Patent 5332910 Issued on July 26, 1994. Estimated Expiration Date: 
November 30, 2013. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
November 30, 2013. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3457633 3536830 3925803 Method of manufacturing solar cells, utilizing single-crystal whisker growth Grid-inserted quantum structure Semiconductor structure and semiconductor laser device Semiconductor structure for optoelectronic components with inclusions Production method, production instrument, and handling method of compound semiconductor quantum boxes, and light emitting devices using those quantum boxes Semiconductor diode laser having smaller beam divergence Patent #: 5170405 Inventors
AssigneeApplicationNo. 159343 filed on 11/30/1993US Classes:257/13, Incoherent light emitter257/17, With particular barrier dimension257/21, Light responsive structure257/22, With specified semiconductor materials257/95, With contoured external surface (e.g., dome shape to facilitate light emission)257/465, Geometric configuration of junction (e.g., fingers)257/466, External physical configuration of semiconductor (e.g., mesas, grooves)257/E33.007Shape of potential barrier (EPO)ExaminersPrimary: Mintel, WilliamAttorney, Agent or FirmForeign Patent References
International ClassH01L 033/00Foreign Application Priority Data1991-03-22 JPAbstractA semiconductor light-emitting device includes a plurality of semiconductor rods, each of which has a pn junction. The semiconductor rods are formed on a semiconductor substrate such that the plurality of semiconductor rods are arranged at a distance substantially equal to an integer multiple of the wavelength of light emitted from the semiconductor rod. With such devices, various novel optical devices such as a micro-cavity laser of which the threshold current is extremely small and a coherent light-emitting device having no threshold value can be realized.Other References
Field of SearchQuantum wellWith particular barrier dimension With specified semiconductor materials Light responsive structure Incoherent light emitter Plural light emitting devices (e.g., matrix, 7-segment array) With heterojunction With contoured external surface (e.g., dome shape to facilitate light emission) Multi-color emission Matrix or array (e.g., single line arrays) Geometric configuration of junction (e.g., fingers) External physical configuration of semiconductor (e.g., mesas, grooves) PHYSICAL CONFIGURATION OF SEMICONDUCTOR (E.G., MESA, BEVEL, GROOVE, ETC.) Mesa structure (e.g., including undercut or stepped mesa configuration or having constant slope taper) With specific housing or contact structure Discrete light emitting and light responsive devices With electrical isolation means in integrated circuit structure With shaped contacts or opaque masking | |
