Non-volatile DRAM cell
Patent 5331188 Issued on July 19, 1994. Estimated Expiration Date: 
February 25, 2012. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
February 25, 2012. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesNon-volatile ram cell Non-volatile dynamic RAM cell Non-volatile RAM cell with enhanced conduction insulators Non-volatile RAM device Patent #: 4471471 InventorsApplicationNo. 841343 filed on 02/25/1992US Classes:257/298Capacitor for signal storage in combination with non-volatile storage meansExaminersPrimary: Prenty, Mark V.Attorney, Agent or FirmInternational ClassesH01L 029/68G11C 011/24 AbstractThe present invention is directed to a one-transistor non-volatile DRAM cell having a two layer floating gate to allow the contents of a storage capacitor to be transferred to the floating gate during power interruptions. The first layer of the floating gate is separated from a storage node of the storage capacitor by a tunnel oxide to allow electron tunnelling between the floating gate and the storage capacitor. In another embodiment of the present invention, a dual electron injector structure is disposed between a one layer floating and the storage node to allow electrons to be injected between the floating gate and the storage node. In another embodiment of the present invention, an erase gate is implemented to remove the charge on the floating gate. The erase gate can be separated from the floating gate by a tunnel oxide or a single electron injector structure to allow electrons to travel from the floating gate to the erase gate.Other References
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