Non-volatile ram cell
Non-volatile dynamic RAM cell
Non-volatile RAM cell with enhanced conduction insulators
Non-volatile RAM device Patent #: 4471471
ApplicationNo. 841343 filed on 02/25/1992
US Classes:257/298Capacitor for signal storage in combination with non-volatile storage means
ExaminersPrimary: Prenty, Mark V.
Attorney, Agent or Firm
International ClassesH01L 029/68
AbstractThe present invention is directed to a one-transistor non-volatile DRAM cell having a two layer floating gate to allow the contents of a storage capacitor to be transferred to the floating gate during power interruptions. The first layer of the floating gate is separated from a storage node of the storage capacitor by a tunnel oxide to allow electron tunnelling between the floating gate and the storage capacitor. In another embodiment of the present invention, a dual electron injector structure is disposed between a one layer floating and the storage node to allow electrons to be injected between the floating gate and the storage node. In another embodiment of the present invention, an erase gate is implemented to remove the charge on the floating gate. The erase gate can be separated from the floating gate by a tunnel oxide or a single electron injector structure to allow electrons to travel from the floating gate to the erase gate.