Undercut membrane mask for high energy photon patterning
November 14, 2011. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod for making a silicon mask Method of making mask for structuring surface areas Method of fabricating screen lens array plates Laser induced dry etching of vias in glass with non-contact masking Laser induced dry chemical etching of metals Laser induced chemical etching of metals with excimer lasers High energy laser mask and method of making same Patent #: 4923772 InventorsApplicationNo. 791712 filed on 11/14/1991US Classes:216/12, FORMING OR TREATING MASK USED FOR ITS NONETCHING FUNCTION (E.G., SHADOW MASK, X-RAY MASK, ETC.)156/345.5, With means for photochemical energization of a gas using ultraviolet, visible, or x-ray radiation216/41, MASKING OF A SUBSTRATE USING MATERIAL RESISTANT TO AN ETCHANT (I.E., ETCH RESIST)216/99, Substrate contains silicon or silicon compound219/121.69, Methods219/121.85, Method428/137, Composite web or sheet438/701Tapered configurationExaminersPrimary: Powell, William A.International ClassesH01L 021/306B44C 001/22 C03C 015/00 AbstractA mask for use with high energy radiation sources in precision projection processing by excimer lasers, for example, is described. The mask comprises a suitable substrate, such as silicon, upon which a multilayer dielectric stack is formed which acts as a reflective coating for the impinging excimer laser radiation, minimizing energy absorption by the mask substrate. The mask transparent areas are defined by the through-holes in the mask. The through-holes are formed with a conically undercut edge profile to define a thin object plane for the mask and minimize scattering of the radiation from the through-hole sidewalls. A method for fabricating the mask is also described.Other References
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