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Laser induced chemical etching of metals with excimer lasers
High energy laser mask and method of making same Patent #: 4923772
ApplicationNo. 791712 filed on 11/14/1991
US Classes:216/12, FORMING OR TREATING MASK USED FOR ITS NONETCHING FUNCTION (E.G., SHADOW MASK, X-RAY MASK, ETC.)156/345.5, With means for photochemical energization of a gas using ultraviolet, visible, or x-ray radiation216/41, MASKING OF A SUBSTRATE USING MATERIAL RESISTANT TO AN ETCHANT (I.E., ETCH RESIST)216/99, Substrate contains silicon or silicon compound219/121.69, Methods219/121.85, Method428/137, Composite web or sheet438/701Tapered configuration
ExaminersPrimary: Powell, William A.
International ClassesH01L 021/306
AbstractA mask for use with high energy radiation sources in precision projection processing by excimer lasers, for example, is described. The mask comprises a suitable substrate, such as silicon, upon which a multilayer dielectric stack is formed which acts as a reflective coating for the impinging excimer laser radiation, minimizing energy absorption by the mask substrate. The mask transparent areas are defined by the through-holes in the mask. The through-holes are formed with a conically undercut edge profile to define a thin object plane for the mask and minimize scattering of the radiation from the through-hole sidewalls. A method for fabricating the mask is also described.